Справочник транзисторов. BDS10SM

 

Биполярный транзистор BDS10SM - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BDS10SM
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 90 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO252

 Аналоги (замена) для BDS10SM

 

 

BDS10SM Datasheet (PDF)

 0.1. Size:41K  semelab
bds10smd.pdf

BDS10SM BDS10SM

BDS10 BDS10SMD BDS10SMD05BDS11 BDS11SMD BDS11SMD05BDS12 BDS12SMD BDS12SMD05SILICON NPN EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES10.6 (0.42)4.6 (0.18)0.8(0.03)FEATURES3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL

 0.2. Size:41K  semelab
bds10smd05.pdf

BDS10SM BDS10SM

BDS10 BDS10SMD BDS10SMD05BDS11 BDS11SMD BDS11SMD05BDS12 BDS12SMD BDS12SMD05SILICON NPN EPITAXIAL BASE IN TO220 METAL ANDMECHANICAL DATACERAMIC SURFACEDimensions in mm(inches)MOUNT PACKAGES10.6 (0.42)4.6 (0.18)0.8(0.03)FEATURES3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL

 9.1. Size:14K  semelab
bds10ig.pdf

BDS10SM BDS10SM

BDS10IGBDS11IGSEMEBDS12IGLABMECHANICAL DATADimensions in mm(inches)SILICON NPN4.83 (0.190)5.08 (0.200)10.41 (0.410)EPITAXIAL BASE IN10.67 (0.420)0.89 (0.035)1.14 (0.045)TO257 METAL PACKAGE3.56 (0.140)Dia.3.81 (0.150)FEATURES1 2 3 HERMETIC TO257 ISOLATED METALPACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS0.64 (0.025)Dia.0.89 (0

 9.2. Size:360K  semelab
bds10n1a.pdf

BDS10SM BDS10SM

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS10N1A, BDS10N1B High Voltage Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 60V VCEO Collector Emitte

 9.3. Size:360K  semelab
bds10n1b.pdf

BDS10SM BDS10SM

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS10N1A, BDS10N1B High Voltage Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO Collector Base Voltage 60V VCEO Collector Emitte

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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