BDS10SM pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDS10SM Specs and Replacement

Type Designator: BDS10SM

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 90 W

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO252

BDS10SM Substitution

- BJT ⓘ Cross-Reference Search

BDS10SM datasheet

0.1. Size:41K semelab

bds10smd.pdf pdf_icon

BDS10 BDS10SMD BDS10SMD05 BDS11 BDS11SMD BDS11SMD05 BDS12 BDS12SMD BDS12SMD05 SILICON NPN EPITAXIAL BASE IN TO220 METAL AND MECHANICAL DATA CERAMIC SURFACE Dimensions in mm(inches) MOUNT PACKAGES 10.6 (0.42) 4.6 (0.18) 0.8 (0.03) FEATURES 3.70 Dia. Nom HERMETIC METAL OR CERAMIC PACKAGES HIGH RELIABILITY 1 2 3 MILITARY AND SPACE OPTIONS SCREENING TO CECC LEVEL... See More ⇒

0.2. Size:41K semelab

bds10smd05.pdf pdf_icon

9.1. Size:14K semelab

bds10ig.pdf pdf_icon

BDS10IG BDS11IG SEME BDS12IG LAB MECHANICAL DATA Dimensions in mm(inches) SILICON NPN 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) EPITAXIAL BASE IN 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) TO257 METAL PACKAGE 3.56 (0.140) Dia. 3.81 (0.150) FEATURES 1 2 3 HERMETIC TO257 ISOLATED METAL PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 0.64 (0.025) Dia. 0.89 (0... See More ⇒

9.2. Size:360K semelab

bds10n1a.pdf pdf_icon

SILICON NPN EPITAXIAL BIPOLAR TRANSISTOR BDS10N1A, BDS10N1B High Voltage Hermetic Ceramic SMD0.5 (TO-276AA) Surface Mount Package Ideally suited for Power Linear, Switching and general Purpose Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VCBO Collector Base Voltage 60V VCEO Collector Emitte... See More ⇒