BDS18 - описание и поиск аналогов

isc Silicon PNP Power Transistor BDS18 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for power liner and switching -Gener purpose power . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -120 V CBO V Collect

BDS18 BDS18SMD BDS18SMD05 BDS19 BDS19SMD BDS19SMD05 SILICON PNP MECHANICAL DATA (Dimensions in mm) EPITAXIAL BASE IN TO220 METAL AND 4.6 10.6 0.8 SMD CERAMIC SURFACE MOUNT PACKAGES 3.6 Dia. FEATURES HERMETIC METAL OR CERAMIC 1 2 3 PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1.0 SCREENING TO CECC LEVELS 2.54 2.70 FULLY ISOLATED (METAL VERSION)

BDS18 BDS18SMD BDS18SMD05 BDS19 BDS19SMD BDS19SMD05 SILICON PNP MECHANICAL DATA (Dimensions in mm) EPITAXIAL BASE IN TO220 METAL AND 4.6 10.6 0.8 SMD CERAMIC SURFACE MOUNT PACKAGES 3.6 Dia. FEATURES HERMETIC METAL OR CERAMIC 1 2 3 PACKAGES HIGH RELIABILITY MILITARY AND SPACE OPTIONS 1.0 SCREENING TO CECC LEVELS 2.54 2.70 FULLY ISOLATED (METAL VERSION)