Биполярный транзистор BDT30AF - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BDT30AF
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 14 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO220F
BDT30AF Datasheet (PDF)
bdt30f bdt30af bdt30bf bdt30cf bdt30df.pdf
isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DFDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -0.4AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT30F; -60V(Min)- BDT30AFCEO(SUS)-80V(Min)- BDT30BF; -100V(Min)- BDT30CF-120V(Min)- BDT30DFComplement to Type BDT29F/AF/BF/CF/DFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operat
bdt30 bdt30a bdt30b bdt30c.pdf
isc Silicon PNP Power Transistors BDT30/A/B/CDESCRIPTIONDC Current Gain -h = 40(Min)@ I = -0.4AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)- BDT30; -60V(Min)- BDT30ACEO(SUS)-80V(Min)- BDT30B; -100V(Min)- BDT30CComplement to Type BDT29/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use i
bdt30f af bf cf df.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF Complement to Type BDT29F/AF/BF/CF/DF APPLICATIONS Designed fo
bdt30 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C Complement to Type BDT29/A/B/C APPLICATIONS Designed for use in output stages of audio and tele
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050