BDT30AF pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BDT30AF Specs and Replacement

Type Designator: BDT30AF

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 14 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO220F

BDT30AF Substitution

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BDT30AF datasheet

..1. Size:215K inchange semiconductor

bdt30f bdt30af bdt30bf bdt30cf bdt30df.pdf pdf_icon

isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION DC Current Gain -h = 40(Min)@ I = -0.4A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT30F; -60V(Min)- BDT30AF CEO(SUS) -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF Complement to Type BDT29F/AF/BF/CF/DF Minimum Lot-to-Lot variations for robust device performance and reliable operat... See More ⇒

8.1. Size:214K inchange semiconductor

bdt30 bdt30a bdt30b bdt30c.pdf pdf_icon

isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION DC Current Gain -h = 40(Min)@ I = -0.4A FE C Collector-Emitter Sustaining Voltage- V = -40V(Min)- BDT30; -60V(Min)- BDT30A CEO(SUS) -80V(Min)- BDT30B; -100V(Min)- BDT30C Complement to Type BDT29/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use i... See More ⇒

9.1. Size:109K inchange semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF Complement to Type BDT29F/AF/BF/CF/DF APPLICATIONS Designed fo... See More ⇒

9.2. Size:158K inchange semiconductor

bdt30 a b c.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION DC Current Gain -hFE = 40(Min)@ IC= -0.4A Collector-Emitter Sustaining Voltage- VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C Complement to Type BDT29/A/B/C APPLICATIONS Designed for use in output stages of audio and tele... See More ⇒

Detailed specifications: BDT29B, BDT29BF, BDT29C, BDT29CF, BDT29DF, BDT29F, BDT30, BDT30A, 2N3904, BDT30B, BDT30BF, BDT30C, BDT30CF, BDT30DF, BDT30F, BDT31, BDT31A