BDT61AF - описание и поиск аналогов

 

BDT61AF. Аналоги и основные параметры

Наименование производителя: BDT61AF

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 17 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 1.5 MHz

Статический коэффициент передачи тока (hFE): 750

Корпус транзистора: TO220F

 Аналоги (замена) для BDT61AF

- подборⓘ биполярного транзистора по параметрам

 

BDT61AF даташит

 ..1. Size:213K  inchange semiconductor
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BDT61AF

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61AF DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BDT60AF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 8.1. Size:215K  inchange semiconductor
bdt61 bdt61a bdt61b bdt61c.pdfpdf_icon

BDT61AF

isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION DC Current Gain -h = 750(Min)@ I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT61; 80V(Min)- BDT61A; CEO(SUS) 100V(Min)- BDT61B; 120V(Min)- BDT61C Complement to Type BDT60/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed

 9.1. Size:213K  inchange semiconductor
bdt61cf.pdfpdf_icon

BDT61AF

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61CF DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BDT60CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 9.2. Size:213K  inchange semiconductor
bdt61f.pdfpdf_icon

BDT61AF

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61F DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BDT60F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

Другие транзисторы: BDT60B, BDT60BF, BDT60C, BDT60CF, BDT60F, BDT60L, BDT61, BDT61A, 2SC2655, BDT61B, BDT61BF, BDT61C, BDT61CF, BDT61F, BDT61L, BDT62, BDT62A

 

 

 

 

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