BDT61AF PDF and Equivalents Search

 

BDT61AF Specs and Replacement

Type Designator: BDT61AF

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 17 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 1.5 MHz

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO220F

 BDT61AF Substitution

- BJT ⓘ Cross-Reference Search

 

BDT61AF datasheet

 ..1. Size:213K  inchange semiconductor

bdt61af.pdf pdf_icon

BDT61AF

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61AF DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BDT60AF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

 8.1. Size:215K  inchange semiconductor

bdt61 bdt61a bdt61b bdt61c.pdf pdf_icon

BDT61AF

isc Silicon NPN Darlington Power Transistors BDT61/A/B/C DESCRIPTION DC Current Gain -h = 750(Min)@ I = 1.5A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min)- BDT61; 80V(Min)- BDT61A; CEO(SUS) 100V(Min)- BDT61B; 120V(Min)- BDT61C Complement to Type BDT60/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed ... See More ⇒

 9.1. Size:213K  inchange semiconductor

bdt61cf.pdf pdf_icon

BDT61AF

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61CF DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BDT60CF Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒

 9.2. Size:213K  inchange semiconductor

bdt61f.pdf pdf_icon

BDT61AF

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDT61F DESCRIPTION High DC Current Gain Low Saturation Voltage Complement to Type BDT60F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒

Detailed specifications: BDT60B, BDT60BF, BDT60C, BDT60CF, BDT60F, BDT60L, BDT61, BDT61A, 2SC2655, BDT61B, BDT61BF, BDT61C, BDT61CF, BDT61F, BDT61L, BDT62, BDT62A

Keywords - BDT61AF pdf specs

 BDT61AF cross reference

 BDT61AF equivalent finder

 BDT61AF pdf lookup

 BDT61AF substitution

 BDT61AF replacement

 

 

 


🌐 : EN  ES  РУ

social

LIST

Last Update

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P

 

 

 

Popular searches

2n3055 transistor | 2n3904 datasheet | irf3710 | tip3055 | mosfet datasheet | irf3205 datasheet | irf5210 | mj15024

 

 

↑ Back to Top
.