Справочник транзисторов. BDT65AF

 

Биполярный транзистор BDT65AF - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BDT65AF
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 22 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимальный постоянный ток коллектора (Ic): 12 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Статический коэффициент передачи тока (hfe): 2000
   Корпус транзистора: TO220F

 Аналоги (замена) для BDT65AF

 

 

BDT65AF Datasheet (PDF)

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BDT65AF
BDT65AF

isc Silicon NPN Darlington Power Transistor BDT65F/AF/BF/CFDESCRIPTIONCollector Current -I = 12ACHigh DC Current Gain-h = 1000(Min)@ I = 5AFE CComplement to Type BDT64F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM RA

 8.1. Size:215K  inchange semiconductor
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BDT65AF
BDT65AF

isc Silicon NPN Darlington Power Transistor BDT65/A/B/CDESCRIPTIONCollector Current -I = 12ACHigh DC Current Gain-h = 1000(Min)@ I = 5AFE CComplement to Type BDT64/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:183K  no
bdt65.pdf

BDT65AF
BDT65AF

 9.2. Size:168K  inchange semiconductor
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BDT65AF
BDT65AF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT65/A/B/C DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDT64/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNI

 9.3. Size:109K  inchange semiconductor
bdt65f-af-bf-cf bdt65f af bf cf.pdf

BDT65AF
BDT65AF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT65F/AF/BF/CF DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDT64F/AF/BF/CF APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER V

 9.4. Size:58K  inchange semiconductor
bdt65c.pdf

BDT65AF
BDT65AF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDT65C DESCRIPTION With TO-220C package High DC Current Gain DARLINGTON Complement to type BDT64C APPLICATIONS For audio output stages and general purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsol

Другие транзисторы... BDT64AF , BDT64B , BDT64BF , BDT64C , BDT64CF , BDT64F , BDT65 , BDT65A , BC547 , BDT65B , BDT65BF , BDT65C , BDT65CF , BDT65F , BDT81 , BDT81F , BDT82 .

 

 
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