All Transistors. BDT65AF Datasheet

 

BDT65AF Datasheet, Equivalent, Cross Reference Search


   Type Designator: BDT65AF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 22 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO220F

 BDT65AF Transistor Equivalent Substitute - Cross-Reference Search

   

BDT65AF Datasheet (PDF)

 ..1. Size:218K  inchange semiconductor
bdt65f bdt65af bdt65bf bdt65cf.pdf

BDT65AF
BDT65AF

isc Silicon NPN Darlington Power Transistor BDT65F/AF/BF/CFDESCRIPTIONCollector Current -I = 12ACHigh DC Current Gain-h = 1000(Min)@ I = 5AFE CComplement to Type BDT64F/AF/BF/CFMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM RA

 8.1. Size:215K  inchange semiconductor
bdt65 bdt65a bdt65b bdt65c.pdf

BDT65AF
BDT65AF

isc Silicon NPN Darlington Power Transistor BDT65/A/B/CDESCRIPTIONCollector Current -I = 12ACHigh DC Current Gain-h = 1000(Min)@ I = 5AFE CComplement to Type BDT64/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(T

 9.1. Size:183K  no
bdt65.pdf

BDT65AF
BDT65AF

 9.2. Size:168K  inchange semiconductor
bdt65 a b c.pdf

BDT65AF
BDT65AF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT65/A/B/C DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDT64/A/B/C APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNI

 9.3. Size:109K  inchange semiconductor
bdt65f-af-bf-cf bdt65f af bf cf.pdf

BDT65AF
BDT65AF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDT65F/AF/BF/CF DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDT64F/AF/BF/CF APPLICATIONS Designed for audio output stages and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER V

 9.4. Size:58K  inchange semiconductor
bdt65c.pdf

BDT65AF
BDT65AF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDT65C DESCRIPTION With TO-220C package High DC Current Gain DARLINGTON Complement to type BDT64C APPLICATIONS For audio output stages and general purpose amplifier and switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsol

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: D45H11E3

 

 
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