BDV67B - аналоги, даташиты, параметры транзистора

BDV67B Datasheet (PDF)

..1. Size:196K inchange semiconductor
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDV67/A/B/C DESCRIPTION Collector Current -I = 16A C Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C Complement to Type BDV66/A/B/C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier

9.1. Size:102K mospec
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A A A

9.2. Size:220K inchange semiconductor
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isc Silicon NPN Darlington Power Transistor BDV67D DESCRIPTION Collector Current -I = 16A C Collector-Emitter Saturation Voltage- V = 2.0V(Max.)@ I = 10A CE(sat) C Complement to Type BDV66D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSO

9.3. Size:122K inchange semiconductor
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDV67/67A/67B/67C/67D DESCRIPTION With TO-3PN package Complement to type BDV66/66A/66B/66C/66D DARLINGTON High DC current gain APPLICATIONS For use in audio output stages and general amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounti

Другие транзисторы... BDV65C , BDV66 , BDV66A , BDV66B , BDV66C , BDV66D , BDV67 , BDV67A , 2N4401 , BDV67C , BDV67D , BDV91 , BDV92 , BDV93 , BDV94 , BDV95 , BDV96 .