BDV67D - параметры, поиск аналогов, даташиты транзистора

BDV67D Datasheet (PDF)

..1. Size:220K inchange semiconductor
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isc Silicon NPN Darlington Power Transistor BDV67DDESCRIPTIONCollector Current -I = 16ACCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) CComplement to Type BDV66DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSO

9.1. Size:102K mospec
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9.2. Size:196K inchange semiconductor
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INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDV67/A/B/CDESCRIPTIONCollector Current -I = 16ACCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) CComplement to Type BDV66/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifier

9.3. Size:122K inchange semiconductor
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDV67/67A/67B/67C/67D DESCRIPTION With TO-3PN package Complement to type BDV66/66A/66B/66C/66D DARLINGTON High DC current gain APPLICATIONS For use in audio output stages and general amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounti

Другие транзисторы... BDV66A , BDV66B , BDV66C , BDV66D , BDV67 , BDV67A , BDV67B , BDV67C , 2SC2383Y , BDV91 , BDV92 , BDV93 , BDV94 , BDV95 , BDV96 , BDW10 , BDW10A .