BDV67D Datasheet, Equivalent, Cross Reference Search
Type Designator: BDV67D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TOP3
BDV67D Transistor Equivalent Substitute - Cross-Reference Search
BDV67D Datasheet (PDF)
bdv67 bdv67d.pdf
isc Silicon NPN Darlington Power Transistor BDV67DDESCRIPTIONCollector Current -I = 16ACCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) CComplement to Type BDV66DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSO
bdv67 bdv67a bdv67b bdv67c.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor BDV67/A/B/CDESCRIPTIONCollector Current -I = 16ACCollector-Emitter Saturation Voltage-: V = 2.0V(Max.)@ I = 10ACE(sat) CComplement to Type BDV66/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifier
bdv67 67a 67b 67c 67d.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDV67/67A/67B/67C/67D DESCRIPTION With TO-3PN package Complement to type BDV66/66A/66B/66C/66D DARLINGTON High DC current gain APPLICATIONS For use in audio output stages and general amplifier and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounti
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BDX50-4
