BDX34B - Даташиты. Аналоги. Основные параметры

Order this document MOTOROLA by BDX33B/D SEMICONDUCTOR TECHNICAL DATA NPN BDX33B Darlington Complementary Silicon Power Transistors BDX33C* PNP . . . designed for general purpose and low speed switching applications. BDX34B High DC Current Gain hFE = 2500 (typ.) at IC = 4.0 Collector Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B BD

isc Silicon PNP Darlington Power Transistor BDX34B DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = -3A FE C Low Collector Saturation Voltage V = -2.5V(Max.)@ I = -3A CE(sat) C Complement to Type BDX33B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS De

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. http //onsemi.com Features DARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 10 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdc COMPLEMENTARY SILICON VCEO(sus) = 80 Vdc (min) -

BDX34/A/B/C Power Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX33/33A/33B/33C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDX34 - 45 V BDX34A - 60 V BDX34B

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. http //onsemi.com Features DARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 10 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdc COMPLEMENTARY SILICON VCEO(sus) = 80 Vdc (min) -

NPN BDX33 BDX33A BDX33B BDX33C PNP BDX34 BDX34A BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO- 220 plastic package. They are intented for use in power linear and switching applications. The com

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package Power Darlington for Linear Switchilng Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BDX33 BDX33A BDX33B BDX33C BDX33D UNIT BDX34 BDX34A BDX34B BDX34C BDX34D Collector -Emitter

isc Silicon PNP Darlington Power Transistor BDX34C DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = -3A FE C Low Collector Saturation Voltage V = -2.5V(Max.)@ I = -3A CE(sat) C Complement to Type BDX33C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX34/A/B/C DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX33/A/B/C APPLICATIONS For power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 )

isc Silicon PNP Darlington Power Transistor BDX34 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -45V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = -4A FE C Low Collector Saturation Voltage V = -2.5V(Max.)@ I = -4A CE(sat) C Complement to Type BDX33 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi

isc Silicon PNP Darlington Power Transistor BDX34A DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = -4A FE C Low Collector Saturation Voltage V = -2.5V(Max.)@ I = -4A CE(sat) C Complement to Type BDX33A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS De