BDX34C - Даташиты. Аналоги. Основные параметры

isc Silicon PNP Darlington Power Transistor BDX34C DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = -3A FE C Low Collector Saturation Voltage V = -2.5V(Max.)@ I = -3A CE(sat) C Complement to Type BDX33C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. http //onsemi.com Features DARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 10 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdc COMPLEMENTARY SILICON VCEO(sus) = 80 Vdc (min) -

Order this document MOTOROLA by BDX33B/D SEMICONDUCTOR TECHNICAL DATA NPN BDX33B Darlington Complementary Silicon Power Transistors BDX33C* PNP . . . designed for general purpose and low speed switching applications. BDX34B High DC Current Gain hFE = 2500 (typ.) at IC = 4.0 Collector Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) BDX33B, 34B BD

BDX34/A/B/C Power Linear and Switching Applications High Gain General Purpose Power Darlington TR Complement to BDX33/33A/33B/33C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDX34 - 45 V BDX34A - 60 V BDX34B

BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. http //onsemi.com Features DARLINGTON High DC Current Gain - hFE = 2500 (typ.) at IC = 4.0 10 AMPERE Collector-Emitter Sustaining Voltage at 100 mAdc COMPLEMENTARY SILICON VCEO(sus) = 80 Vdc (min) -

NPN BDX33 BDX33A BDX33B BDX33C PNP BDX34 BDX34A BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS The BDX33B, BDX33B and BDX33C are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration and are mounted in Jedec TO- 220 plastic package. They are intented for use in power linear and switching applications. The com

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package Power Darlington for Linear Switchilng Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BDX33 BDX33A BDX33B BDX33C BDX33D UNIT BDX34 BDX34A BDX34B BDX34C BDX34D Collector -Emitter

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX34/A/B/C DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX33/A/B/C APPLICATIONS For power linear and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 )

isc Silicon PNP Darlington Power Transistor BDX34B DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = -3A FE C Low Collector Saturation Voltage V = -2.5V(Max.)@ I = -3A CE(sat) C Complement to Type BDX33B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS De

isc Silicon PNP Darlington Power Transistor BDX34 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -45V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = -4A FE C Low Collector Saturation Voltage V = -2.5V(Max.)@ I = -4A CE(sat) C Complement to Type BDX33 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desi

isc Silicon PNP Darlington Power Transistor BDX34A DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain h = 750(Min) @I = -4A FE C Low Collector Saturation Voltage V = -2.5V(Max.)@ I = -4A CE(sat) C Complement to Type BDX33A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS De