BDX54 - Даташиты. Аналоги. Основные параметры

Order this document MOTOROLA by BDX53B/D SEMICONDUCTOR TECHNICAL DATA NPN Plastic Medium-Power BDX53B Complementary Silicon Transistors BDX53C PNP . . . designed for general purpose amplifier and low speed switching applications. BDX54B High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdc BDX54C VCEO(sus) = 80

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53C BDX54, BDX54A, BDX54B, BDX54C BDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORS BDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4

isc Silicon PNP Darlington Power Transistor BDX54 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -45V(Min) CEO(sus) High DC Current Gain h = 750(Min) @I = -3A FE C Low Collector Saturation Voltage V = -2.0 V(Max) @ I = -3.0 A CE(sat) C Complement to Type BDX53 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX54/A/B/C DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX53/A/B/C APPLICATIONS Power linear and switching applications Hammer drivers,audio amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absol

BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 2 1 Audio amplifiers TO-220 Linear and switching industrial equipment Description The devices are manufactured in planar base island t

BDX54/A/B/C Hammer Drivers, Audio Amplifiers Applications Power Liner and Switching Applications Power Darlington TR Complement to BDX53, BDX53A, BDX53B and BDX53C respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BDX54 - 45 V

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http //onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage -

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors www.onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors http //onsemi.com These devices are designed for general-purpose amplifier and low-speed switching applications. DARLINGTON Features 8 AMPERE High DC Current Gain - COMPLEMENTARY SILICON hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTORS Collector Emitter Sustaining Voltage -

isc Silicon PNP Darlington Power Transistor BDX54A DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(sus) High DC Current Gain h = 750(Min) @I = -3A FE C Low Collector Saturation Voltage V = -2.0 V(Max) @ I = -3.0 A CE(sat) C Complement to Type BDX53A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

isc Silicon PNP Darlington Power Transistor BDX54B DESCRIPTION Collector-Emitter Sustaining Voltage- V = -80V(Min) CEO(sus) High DC Current Gain h = 750(Min) @I = -3A FE C Low Collector Saturation Voltage V = -2.0 V(Max) @ I = -3.0 A CE(sat) C Complement to Type BDX53B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

isc Silicon PNP Darlington Power Transistor BDX54F DESCRIPTION Collector Current -I = -8A C High DC Current Gain- h = 500(Min)@ I = -2A FE C Complement to Type BDX53F Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

isc Silicon PNP Darlington Power Transistor BDX54C DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(sus) High DC Current Gain h = 750(Min) @I = -3A FE C Low Collector Saturation Voltage V = -2.0 V (Max) @ I = -3.0 A CE(sat) C Complement to Type BDX53C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS