isc Silicon PNP Darlington Power Transistor BDX54FDESCRIPTIONCollector Current -I = -8ACHigh DC Current Gain-: h = 500(Min)@ I = -2AFE CComplement to Type BDX53FMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

Order this documentMOTOROLAby BDX53B/DSEMICONDUCTOR TECHNICAL DATANPNPlastic Medium-PowerBDX53BComplementary SiliconTransistorsBDX53CPNP. . . designed for generalpurpose amplifier and lowspeed switching applications.BDX54B High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 mAdcBDX54CVCEO(sus) = 80

BDX53B - BDX53CBDX54B - BDX54CComplementary power Darlington transistorsFeatures Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diodeApplication321 Audio amplifiersTO-220 Linear and switching industrial equipmentDescriptionThe devices are manufactured in planar base island t

BDX54/A/B/CHammer Drivers, Audio Amplifiers ApplicationsPower Liner and Switching Applications Power Darlington TR Complement to BDX53, BDX53A, BDX53B and BDX53C respectivelyTO-22011.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BDX54 - 45 V

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorshttp://onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage -

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage - @ 1

BDX53B, BDX53C (NPN),BDX54B, BDX54C (PNP)Plastic Medium-PowerComplementary SiliconTransistorshttp://onsemi.comThese devices are designed for general-purpose amplifier andlow-speed switching applications.DARLINGTONFeatures8 AMPERE High DC Current Gain -COMPLEMENTARY SILICONhFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTORS Collector Emitter Sustaining Voltage -

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package BDX53, BDX53A, BDX53B, BDX53CBDX54, BDX54A, BDX54B, BDX54CBDX53, 53A, 53B, 53C NPN PLASTIC POWER TRANSISTORSBDX54, 54A, 54B, 54C PNP PLASTIC POWER TRANSISTORSPower Darlingtons for Linear and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4

isc Silicon PNP Darlington Power Transistor BDX54DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -45V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = -3AFE CLow Collector Saturation Voltage: V = -2.0 V(Max) @ I = -3.0 ACE(sat) CComplement to Type BDX53Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon PNP Darlington Power Transistor BDX54ADESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = -3AFE CLow Collector Saturation Voltage: V = -2.0 V(Max) @ I = -3.0 ACE(sat) CComplement to Type BDX53AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon PNP Darlington Power Transistor BDX54BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = -3AFE CLow Collector Saturation Voltage: V = -2.0 V(Max) @ I = -3.0 ACE(sat) CComplement to Type BDX53BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon PNP Darlington Power Transistor BDX54CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(sus)High DC Current Gain: h = 750(Min) @I = -3AFE CLow Collector Saturation Voltage: V = -2.0 V (Max) @ I = -3.0 ACE(sat) CComplement to Type BDX53CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX54/A/B/C DESCRIPTION With TO-220C package High DC current gain DARLINGTON Complement to type BDX53/A/B/C APPLICATIONS Power linear and switching applications Hammer drivers,audio amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsol