isc Silicon NPN Darlington Power Transistor BDX65/A/B/CDESCRIPTIONCollector Current -I = 12ACHigh DC Current Gain-h = 1000(Min)@ I = 5AFE CComplement to Type BDX64/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM RATI

BDX 65, A, B, CNPN SILICON DARLINGTONSGeneral purpose darlingtons designed for power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDX65 60BDX65A 80VCEO Collector-Emitter Voltage VBDX65B 100BDX65C 120BDX65 80BDX65A 100VCEV Collector-EmitterVoltage VBE=-1.5 V VBDX65B 120BDX65C 120BDX65BDX65AVEBO Emitter-Base Voltage 5.0 V

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX65 DESCRIPTION With TO-3 package DARLINGTON Complement to type BDX64 APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX65/A/B/C DESCRIPTION Collector Current -IC= 12A High DC Current Gain-hFE= 1000(Min)@ IC= 5A Complement to Type BDX64/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VA

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BDX65A DESCRIPTION With TO-3 package DARLINGTON Complement to type BDX64A APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25