Биполярный транзистор BDX66B - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BDX66B
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 20 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Статический коэффициент передачи тока (hfe): 2000
Корпус транзистора: TO3
BDX66B Datasheet (PDF)
bdx66 bdx66a bdx66b bdx66c.pdf
isc Silicon PNP Darlington Power Transistor BDX66/A/B/CDESCRIPTIONCollector Current -I = -16ACHigh DC Current Gain-h = 1000(Min)@ I = -10AFE CComplement to Type BDX67/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM R
bdx66-a-b-c.pdf
BDX 66, A, B, CPNP SILICON DARLINGTONSHigh current power darlingtons designed for power amplification andswitching applications.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDX66-60BDX66A-80VCEO Collector-Emitter Voltage VBDX66B -100BDX66C-120BDX66 -60BDX66A -80VCBO Collector-Base Voltage VBDX66B -100BDX66C -120BDX66BDX66AVEBO Emitter-Base Voltage -
bdx66.pdf
BDX 66, A, B, C PNP SILICON DARLINGTONSHigh current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitBDX66 60 BDX66A 80 -VCEO Collector-Emitter Voltage V BDX66B 100 BDX66C 120 BDX66 60 BDX66A 80 -VCBO Collector-Base Voltage V BDX66B 100 BDX66C 120 BDX66 BDX66A -VEBO Emitter-Base V
bdx66c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX66C DESCRIPTION With TO-3 package DARLINGTON High current APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL
bdx66 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX66/A/B/C DESCRIPTION Collector Current -IC= -16A High DC Current Gain-hFE= 1000(Min)@ IC= -10A Complement to Type BDX67/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
bdx66.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX66 DESCRIPTION With TO-3 package High current DARLINGTON APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL P
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050