BDX66B Datasheet, Equivalent, Cross Reference Search
Type Designator: BDX66B
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 2000
Noise Figure, dB: -
Package: TO3
BDX66B Transistor Equivalent Substitute - Cross-Reference Search
BDX66B Datasheet (PDF)
bdx66 bdx66a bdx66b bdx66c.pdf
isc Silicon PNP Darlington Power Transistor BDX66/A/B/CDESCRIPTIONCollector Current -I = -16ACHigh DC Current Gain-h = 1000(Min)@ I = -10AFE CComplement to Type BDX67/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio output stages and general amplifierand switching applicationsABSOLUTE MAXIMUM R
bdx66-a-b-c.pdf
BDX 66, A, B, CPNP SILICON DARLINGTONSHigh current power darlingtons designed for power amplification andswitching applications.ABSOLUTE MAXIMUM RATINGSSymbol Ratings Value UnitBDX66-60BDX66A-80VCEO Collector-Emitter Voltage VBDX66B -100BDX66C-120BDX66 -60BDX66A -80VCBO Collector-Base Voltage VBDX66B -100BDX66C -120BDX66BDX66AVEBO Emitter-Base Voltage -
bdx66.pdf
BDX 66, A, B, C PNP SILICON DARLINGTONSHigh current power darlingtons designed for power amplification and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitBDX66 60 BDX66A 80 -VCEO Collector-Emitter Voltage V BDX66B 100 BDX66C 120 BDX66 60 BDX66A 80 -VCBO Collector-Base Voltage V BDX66B 100 BDX66C 120 BDX66 BDX66A -VEBO Emitter-Base V
bdx66c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX66C DESCRIPTION With TO-3 package DARLINGTON High current APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL
bdx66 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX66/A/B/C DESCRIPTION Collector Current -IC= -16A High DC Current Gain-hFE= 1000(Min)@ IC= -10A Complement to Type BDX67/A/B/C APPLICATIONS Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER
bdx66.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BDX66 DESCRIPTION With TO-3 package High current DARLINGTON APPLICATIONS Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SYMBOL P
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
