Биполярный транзистор BF439
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BF439
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.1
W
Макcимально допустимое напряжение коллектор-база (Ucb): 20
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3
V
Макcимальный постоянный ток коллектора (Ic): 0.01
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 900
MHz
Ёмкость коллекторного перехода (Cc): 1
pf
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора:
TO72
Аналоги (замена) для BF439
BF439
Datasheet (PDF)
0.1. Size:139K motorola
mmbf4391lt1 mmbf4392lt1 mmbf4393lt1.pdf 
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF4391LT1/DMMBF4391LT1JFET Switching TransistorsMMBF4392LT1NChannel2 SOURCEMMBF4393LT13GATE31 DRAIN1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDS 30 VdcCASE 31808, STYLE 10DrainGate Voltage VDG 30 VdcSOT23 (TO236AB)GateSource Voltage VGS 30 VdcForward
0.2. Size:304K philips
pmbf4391 pmbf4392 pmbf4393 cnv.pdf 
DISCRETE SEMICONDUCTORS DATA SHEETPMBF4391; PMBF4392; PMBF4393N-channel FETsProduct specification April 1995NXP Semiconductors Product specificationPMBF4391;N-channel FETsPMBF4392; PMBF4393DESCRIPTIONSymmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film c
0.3. Size:36K philips
pmbf4391 pmbf4392 pmbf4393 cnv 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETPMBF4391; PMBF4392;PMBF4393N-channel FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBF4391;N-channel FETsPMBF4392; PMBF4393DESCRIPTIONSymmetrical silicon n-channeldepletion type junction field-effecttransistors on a plasticmicrominiature envelope intended f
0.4. Size:708K fairchild semi
pn4391 pn4392 pn4393 mmbf4391 mmbf4392 mmbf4393.pdf 
PN4391 MMBF4391PN4392 MMBF4392PN4393 MMBF4393GSG TO-92SSOT-23 DDMark: 6J / 6K / 6GNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabalized amplifiers. Sourcedfrom Process 51. See J111 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise noted
0.5. Size:279K onsemi
mmbf4391 mmbf4392 mmbf4393.pdf 
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.6. Size:127K onsemi
mmbf4391lt1 mmbf4392lt1g mmbf4393lt1g.pdf 
MMBF4391LT1G,MMBF4392LT1G,MMBF4393LT1GJFET Switching TransistorsN-Channelhttp://onsemi.comFeatures2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant3GATEMAXIMUM RATINGS1 DRAINRating Symbol Value UnitDrain-Source Voltage VDS 30 VdcDrain-Gate Voltage VDG 30 Vdc3Gate-Source Voltage VGS 30 Vdc1Forward Gate Current IG(f) 50 mAdc
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