Биполярный транзистор 2N300 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N300
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.02 W
Макcимально допустимое напряжение коллектор-база (Ucb): 7 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 4 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.02 A
Предельная температура PN-перехода (Tj): 85 °C
Граничная частота коэффициента передачи тока (ft): 40 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO30
2N300 Datasheet (PDF)
2n3009 2n3013 2n3014.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
ixbt12n300.pdf
High Voltage, High GainVCES = 3000VIXBT12N300BIMOSFETTM MonolithicIXBH12N300IC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-268 (IXBT)GSymbol Test Conditions Maximum RatingsEVCES TC = 25C to 150C 3000 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247 (IXBH)VGEM Transient 30 VIC25 TC = 25C 30 A
ixth2n300p3hv ixtt2n300p3hv.pdf
Advance Technical InformationHigh Voltage VDSS = 3000VIXTT2N300P3HVPower MOSFETID25 = 2AIXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT)N-Channel Enhancement ModeGS D (Tab)TO-247HV (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 3000 VVDGR TJ = 25C to 150C, RGS = 1M 3000 VVGSS Continuous 20 VV
ixbh32n300.pdf
Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBH32N300BIMOSFETTM MonolithicIXBT32N300IC110 = 32ABipolar MOS TransistorVCE(sat) 3.2VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 3000 VCEVGES Continuous 20 VVGEM Transient 30 V
ixbf42n300.pdf
Preliminary Technical InformationHigh Voltage, BiMOSFETTMVCES = 3000VIXBF42N300Monolithic Bipolar MOSIC110 = 24ATransistorVCE(sat) 3.0V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 25 V12VGEM Transient 35 V
ixbf22n300.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBF22N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorVCE(sat) 2.7V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 V12VGEM Transient
ixbv22n300s.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBV22N300SBIMOSFETTM MonolithicIC110 = 22ABipolar MOS TransistorVCE(sat) 2.7VPLUS220SMDHVSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VGEVGES Continuous 20 VC (Tab)VGEM Transient 30 VIC25 TC = 25C
mmix4b22n300.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VMMIX4B22N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorC2C1VCE(sat) 2.7VG1G2E2C4 E1C3(Electrically Isolated Tab)G3 G4C2E3E4G2E2C4Symbol Test Conditions Maximum RatingsG4E3E4C1VCES TJ = 25C to 150C 3000
ixbh12n300.pdf
High Voltage, High GainVCES = 3000VIXBT12N300BIMOSFETTM MonolithicIXBH12N300IC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-268 (IXBT)GSymbol Test Conditions Maximum RatingsEVCES TC = 25C to 150C 3000 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247 (IXBH)VGEM Transient 30 VIC25 TC = 25C 30 A
ixbt12n300hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA12N300HVBIMOSFETTM MonolithicIXBT12N300HVIC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-263 (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VTO-268 (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM Trans
ixbt42n300hv.pdf
Preliminary Technical InformationHigh Voltage, BiMOSFETTMVCES = 3000VIXBT42N300HVMonolithic Bipolar MOSIXBH42N300HVIC110 = 42ATransistorVCE(sat) 3.0VTO-268HV (IXBT)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VTO-247HV (IXBH)VGES Continuous 25 VVGEM Trans
ixbf32n300.pdf
Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBF32N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorVCE(sat) 3.2V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 V1VCGR TJ = 25C to 150C, RGE = 1M 3000 V2VGES Continuous 20 V5VGEM Transie
ixbh42n300hv.pdf
Preliminary Technical InformationHigh Voltage, BiMOSFETTMVCES = 3000VIXBT42N300HVMonolithic Bipolar MOSIXBH42N300HVIC110 = 42ATransistorVCE(sat) 3.0VTO-268HV (IXBT)GESymbol Test Conditions Maximum Ratings C (Tab)VCES TC = 25C to 150C 3000 VVCGR TJ = 25C to 150C, RGE = 1M 3000 VTO-247HV (IXBH)VGES Continuous 25 VVGEM Trans
ixbh22n300hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBT22N300HVBIMOSFETTM MonolithicIXBH22N300HVIC110 = 22ABipolar MOS TransistorVCE(sat) 2.7VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3000 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247HV (IXBH)VGEM
ixbf12n300.pdf
Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBF12N300BIMOSFETTM MonolithicIC90 = 12ABipolar MOS TransistorVCE(sat) 3.2V(Electrically Isolated Tab)ISOPLUS i4-PakTMSymbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 V1VCGR TJ = 25C to 150C, RGE = 1M 3000 V2VGES Continuous 20 V5VGEM Transie
ixba12n300hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBA12N300HVBIMOSFETTM MonolithicIXBT12N300HVIC110 = 12ABipolar MOS TransistorVCE(sat) 3.2VTO-263 (IXBA)GEC (Tab)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VTO-268 (IXBT)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VVGEM Trans
mmix4b12n300.pdf
Preliminary Technical InformationHigh Voltage, High GainMMIX4B12N300 VCES = 3000VBIMOSFETTM MonolithicIC110 = 11ABipolar MOS TransistorVCE(sat) 3.2VC2C1G1G2(Electrically Isolated Tab)E2C4 E1C3G3 G4C2G2E3E4E2C4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TC = 25C to 150C 3000 V Isolated TabE3E4VCG
ixbt32n300.pdf
Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBH32N300BIMOSFETTM MonolithicIXBT32N300IC110 = 32ABipolar MOS TransistorVCE(sat) 3.2VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 3000 VCEVGES Continuous 20 VVGEM Transient 30 V
ixbt22n300hv.pdf
Advance Technical InformationHigh Voltage, High GainVCES = 3000VIXBT22N300HVBIMOSFETTM MonolithicIXBH22N300HVIC110 = 22ABipolar MOS TransistorVCE(sat) 2.7VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3000 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3000 VVGES Continuous 20 VTO-247HV (IXBH)VGEM
2n3007.pdf
2N3007Dimensions in mm (inches). Bipolar NPNP Device in a 5.84 (0.230)5.31 (0.209) Hermetically sealed TO18 4.95 (0.195)4.52 (0.178)Metal Package. Bipolar NPNP Device. VCEO = 100V 0.48 (0.019)0.41 (0.016)dia.IC = 0.35A 2.54 (0.100)All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX,
Другие транзисторы... 2N2993 , 2N2994 , 2N2995 , 2N2996 , 2N2997 , 2N2998 , 2N2999 , 2N30 , TIP122 , 2N3000 , 2N3009 , 2N301 , 2N3010 , 2N3011 , 2N3012 , 2N3013 , 2N3013R .
History: 2CY31
History: 2CY31
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050