2N300 PDF and Equivalents Search

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High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor VCE(sat) 3.2V TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25 C to 150 C 3000 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V TO-247 (IXBH) VGEM Transient 30 V IC25 TC = 25 C 30 A ... See More ⇒

Advance Technical Information High Voltage VDSS = 3000V IXTT2N300P3HV Power MOSFET ID25 = 2A IXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 3000 V VDGR TJ = 25 C to 150 C, RGS = 1M 3000 V VGSS Continuous 20 V V... See More ⇒

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBH32N300 BIMOSFETTM Monolithic IXBT32N300 IC110 = 32A Bipolar MOS Transistor VCE(sat) 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V C E VGES Continuous 20 V VGEM Transient 30 V... See More ⇒

Preliminary Technical Information High Voltage, BiMOSFETTM VCES = 3000V IXBF42N300 Monolithic Bipolar MOS IC110 = 24A Transistor VCE(sat) 3.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 25 V 1 2 VGEM Transient 35 V ... See More ⇒

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBF22N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor VCE(sat) 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V 1 2 VGEM Transient ... See More ⇒

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBV22N300S BIMOSFETTM Monolithic IC110 = 22A Bipolar MOS Transistor VCE(sat) 2.7V PLUS220SMDHV Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V G E VGES Continuous 20 V C (Tab) VGEM Transient 30 V IC25 TC = 25 C ... See More ⇒

Advance Technical Information High Voltage, High Gain VCES = 3000V MMIX4B22N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor C2 C1 VCE(sat) 2.7V G1 G2 E2C4 E1C3 (Electrically Isolated Tab) G3 G4 C2 E3E4 G2 E2C4 Symbol Test Conditions Maximum Ratings G4 E3E4 C1 VCES TJ = 25 C to 150 C 3000 ... See More ⇒

High Voltage, High Gain VCES = 3000V IXBT12N300 BIMOSFETTM Monolithic IXBH12N300 IC110 = 12A Bipolar MOS Transistor VCE(sat) 3.2V TO-268 (IXBT) G Symbol Test Conditions Maximum Ratings E VCES TC = 25 C to 150 C 3000 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V TO-247 (IXBH) VGEM Transient 30 V IC25 TC = 25 C 30 A ... See More ⇒

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA12N300HV BIMOSFETTM Monolithic IXBT12N300HV IC110 = 12A Bipolar MOS Transistor VCE(sat) 3.2V TO-263 (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V TO-268 (IXBT) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V VGEM Trans... See More ⇒

Preliminary Technical Information High Voltage, BiMOSFETTM VCES = 3000V IXBT42N300HV Monolithic Bipolar MOS IXBH42N300HV IC110 = 42A Transistor VCE(sat) 3.0V TO-268HV (IXBT) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V TO-247HV (IXBH) VGES Continuous 25 V VGEM Trans... See More ⇒

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBF32N300 BIMOSFETTM Monolithic IC90 = 22A Bipolar MOS Transistor VCE(sat) 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V 1 VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V 2 VGES Continuous 20 V 5 VGEM Transie... See More ⇒

Preliminary Technical Information High Voltage, BiMOSFETTM VCES = 3000V IXBT42N300HV Monolithic Bipolar MOS IXBH42N300HV IC110 = 42A Transistor VCE(sat) 3.0V TO-268HV (IXBT) G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TC = 25 C to 150 C 3000 V VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V TO-247HV (IXBH) VGES Continuous 25 V VGEM Trans... See More ⇒

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBT22N300HV BIMOSFETTM Monolithic IXBH22N300HV IC110 = 22A Bipolar MOS Transistor VCE(sat) 2.7V TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 3000 V E C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V TO-247HV (IXBH) VGEM ... See More ⇒

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBF12N300 BIMOSFETTM Monolithic IC90 = 12A Bipolar MOS Transistor VCE(sat) 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V 1 VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V 2 VGES Continuous 20 V 5 VGEM Transie... See More ⇒

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBA12N300HV BIMOSFETTM Monolithic IXBT12N300HV IC110 = 12A Bipolar MOS Transistor VCE(sat) 3.2V TO-263 (IXBA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V TO-268 (IXBT) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V VGEM Trans... See More ⇒

Preliminary Technical Information High Voltage, High Gain MMIX4B12N300 VCES = 3000V BIMOSFETTM Monolithic IC110 = 11A Bipolar MOS Transistor VCE(sat) 3.2V C2 C1 G1 G2 (Electrically Isolated Tab) E2C4 E1C3 G3 G4 C2 G2 E3E4 E2C4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions Maximum Ratings G3 VCES TC = 25 C to 150 C 3000 V Isolated Tab E3E4 VCG... See More ⇒

Preliminary Technical Information High Voltage, High Gain VCES = 3000V IXBH32N300 BIMOSFETTM Monolithic IXBT32N300 IC110 = 32A Bipolar MOS Transistor VCE(sat) 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 3000 V G C (TAB) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V C E VGES Continuous 20 V VGEM Transient 30 V... See More ⇒

Advance Technical Information High Voltage, High Gain VCES = 3000V IXBT22N300HV BIMOSFETTM Monolithic IXBH22N300HV IC110 = 22A Bipolar MOS Transistor VCE(sat) 2.7V TO-268HV (IXBT) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 3000 V E C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 3000 V VGES Continuous 20 V TO-247HV (IXBH) VGEM ... See More ⇒

2N3007 Dimensions in mm (inches). Bipolar NPNP Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPNP Device. VCEO = 100V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.35A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX,... See More ⇒

Boca Semiconductor Corp. BSC http //www.bocasemi.com ... See More ⇒