BF822 - Даташиты. Аналоги. Основные параметры

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF820; BF822 NPN high-voltage transistors 1999 Apr 15 Product specification Supersedes data of 1997 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistors BF820; BF822 FEATURES PINNING Low current (max. 50 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 co

DISCRETE SEMICONDUCTORS DATA SHEET BF820; BF822 NPN high-voltage transistors Product data sheet 2004 Jan 16 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet NPN high-voltage transistors BF820; BF822 FEATURES PINNING Low current (max. 50 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony and profe

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BF820 BF822 SILICON EPITAXIAL TRANSISTORS N P N transistors Marking PACKAGE OUTLINE DETAILS BF820 = 1V ALL DIMENSIONS IN mm BF822 = 1X Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS BF820 BF822 Collector base voltage

BF8 20/ BF8 22 TRANSISTOR (NPN) SOT-23 FEATURES Low current (max.50 mA) 1. BASE High voltage (max.300V) 2. EMITTER Telephony and professional communication equipment. 3. COLLECTOR MARKING BF820 1V, BF822 1X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BF820 300 VCBO V BF822 250 Collector-Emitter Voltag

BF820/BF822 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low current (max.50 mA) High voltage (max.300V) Telephony and professional communication equipment. MARKING BF820 1V, BF822 1X Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BF820 300 V

DISCRETE SEMICONDUCTORS DATA SHEET BF820W; BF822W NPN high-voltage transistors 1997 Sep 03 Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN high-voltage transistors BF820W; BF822W FEATURES PINNING Low current (max. 50 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitt

SMD Type Transistors SMD Type Transistors SMD Type Transistors Product specification BF822W Features Low current (max. 50 mA) High voltage (max. 250 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage (open emitter) VCBO 250 V Collector-emitter voltage (open base) VCEO 250 V Emitter-base voltage (open collector) VE