DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087BSP50; BSP51; BSP52NPN Darlington transistors1999 Apr 23Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationNPN Darlington transistors BSP50; BSP51; BSP52FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V)1 base Integrated diod

June 2007BSP51NPN Darlington TransistorThis device is designed for applications requiring extremly high current gain at collector currents to 500mA.Sourced from process 03. 4SOT-22331. Base 2. Collector 3. Emitter21Absolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 90

NPN Silicon Darlington Transistors BSP 50 BSP 52 High collector current Low collector-emitter saturation voltage Complementary types: BSP 60 BSP 62 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4BSP 50 BSP 50 Q62702-P1163 B C E C SOT-223BSP 51 BSP 51 Q62702-P1164BSP 52 BSP 52 Q62702-P1165Maximum RatingsParameter Symbol Values Unit