BSP51 Specs and Replacement
Type Designator: BSP51
SMD Transistor Code: AS2
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1.5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 5000
Package: SOT89
BSP51 Substitution
- BJT ⓘ Cross-Reference Search
BSP51 datasheet
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 BSP50; BSP51; BSP52 NPN Darlington transistors 1999 Apr 23 Product specification Supersedes data of 1997 Apr 22 Philips Semiconductors Product specification NPN Darlington transistors BSP50; BSP51; BSP52 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V) 1 base Integrated diod... See More ⇒
June 2007 BSP51 NPN Darlington Transistor This device is designed for applications requiring extremly high current gain at collector currents to 500mA. Sourced from process 03. 4 SOT-223 3 1. Base 2. Collector 3. Emitter 2 1 Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 80 V VCBO Collector-Base Voltage 90 ... See More ⇒
NPN Silicon Darlington Transistors BSP 50 BSP 52 High collector current Low collector-emitter saturation voltage Complementary types BSP 60 BSP 62 (PNP) Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 4 BSP 50 BSP 50 Q62702-P1163 B C E C SOT-223 BSP 51 BSP 51 Q62702-P1164 BSP 52 BSP 52 Q62702-P1165 Maximum Ratings Parameter Symbol Values Unit ... See More ⇒
Detailed specifications: BSP33, BSP33T1, BSP33T3, BSP40, BSP41, BSP42, BSP43, BSP50, TIP142, BSP52, BSP52T1, BSP52T3, BSP60, BSP61, BSP62, BSP62T1, BSP62T3
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