BSX62D - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSX62; BSX63 NPN switching transistors 1997 Jun 19 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors BSX62; BSX63 FEATURES PINNING High current (max. 3 A) PIN DESCRIPTION Low voltage (max. 60 V). 1 emitter 2 base

BSX62SMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 3A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab herme

BSX62SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 3A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0.

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can Package NPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL BSX62 BSX63 UNITS VCEO Collector Emitter Voltage 40 60 V VCES Collector Emitter Voltage 60 80 V