Биполярный транзистор BU931SM
Даташит. Аналоги
Наименование производителя: BU931SM
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 125
W
Макcимально допустимое напряжение коллектор-база (Ucb): 500
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 10
A
Предельная температура PN-перехода (Tj): 175
°C
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: SOP10
Аналог (замена) для BU931SM
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BU931SM
Datasheet (PDF)
9.1. Size:654K st
bu931t.pdf 

BU931T Automotive-grade high voltage ignition coil driver NPN power Darlington transistor Datasheet - production data Features AEC-Q101 qualified Very rugged Bipolar technology TAB High operating junction temperature Applications 3 High ruggedness electronic ignitions 21Description TO-220This is a high voltage power Darlington transistor developed
9.2. Size:77K st
bu931-bub931t.pdf 

BU931TBUB931T HIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263)POWER PACKAGE IN TUBE (NO SUFFIX)OR IN TAPE & REEL (SUFFIX T4)APPLICATIONS332 HIGH RUGGEDNESS ELECTRONIC11IGNITIONSTO-220 D2PAKTO-263INTERNAL SCHEMATIC DIAG
9.3. Size:97K st
bu931 bu931p bu931pfi.pdf 

BU931/BU931PBU931PFIHIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGESTO-3APPLICATIONS1 HIGH RUGGEDNESS ELECTRONIC2IGNITIONS33221 1TO-218 ISOWATT218INTERNAL SCHEMATIC DIAGRAMfor TO-3Emitter: pin 2Base: pin1Collector: tabABSOLUTE MAXIMUM RATINGSSymbol Pa
9.4. Size:213K inchange semiconductor
bu931t.pdf 

isc Silicon NPN Power Transistor BU931TDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV E
9.5. Size:217K inchange semiconductor
bu931rpfi.pdf 

isc Silicon NPN Power Transistor BU931RPFIDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEO
9.6. Size:132K inchange semiconductor
bu931r bu932r.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU931R BU932R DESCRIPTION With TO-3 package DARLINGTON APPLICATIONS Automotive ignition applications Inverters circuits for motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBO
9.7. Size:216K inchange semiconductor
bu931p.pdf 

isc Silicon NPN Power Transistor BU931PDESCRIPTIONHigh VoltageDARLINGTONMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 4
9.8. Size:223K inchange semiconductor
bu931zpfi.pdf 

isc Silicon NPN Darlington Power Transistor BU931ZPFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T
9.9. Size:212K inchange semiconductor
bu931z.pdf 

isc Silicon NPN Darlington Power Transistor BU931ZDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T =2
9.10. Size:208K inchange semiconductor
bu931.pdf 

isc Silicon NPN Power Transistor BU931DESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Em
9.11. Size:218K inchange semiconductor
bu931zp.pdf 

isc Silicon NPN Darlington Power Transistor BU931ZPDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T =
9.12. Size:208K inchange semiconductor
bu931r.pdf 

isc Silicon NPN Power Transistor BU931RDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEOV E
9.13. Size:218K inchange semiconductor
bu931rp.pdf 

isc Silicon NPN Power Transistor BU931RPDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEOV
Другие транзисторы... BU930Z
, BU930ZP
, BU931
, BU931P
, BU931PFI
, BU931R
, BU931RP
, BU931RPFI
, BC327
, BU931T
, BU931TFI
, BU931Z
, BU931ZP
, BU931ZPFI
, BU931ZT
, BU931ZTFI
, BU932
.