BU931SM Datasheet and Replacement
Type Designator: BU931SM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125
W
Maximum Collector-Base Voltage |Vcb|: 500
V
Maximum Collector-Emitter Voltage |Vce|: 400
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 175
°C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOP10
-
BJT ⓘ Cross-Reference Search
BU931SM Datasheet (PDF)
9.1. Size:654K st
bu931t.pdf 

BU931T Automotive-grade high voltage ignition coil driver NPN power Darlington transistor Datasheet - production data Features AEC-Q101 qualified Very rugged Bipolar technology TAB High operating junction temperature Applications 3 High ruggedness electronic ignitions 21Description TO-220This is a high voltage power Darlington transistor developed
9.2. Size:77K st
bu931-bub931t.pdf 

BU931TBUB931T HIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263)POWER PACKAGE IN TUBE (NO SUFFIX)OR IN TAPE & REEL (SUFFIX T4)APPLICATIONS332 HIGH RUGGEDNESS ELECTRONIC11IGNITIONSTO-220 D2PAKTO-263INTERNAL SCHEMATIC DIAG
9.3. Size:97K st
bu931 bu931p bu931pfi.pdf 

BU931/BU931PBU931PFIHIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGESTO-3APPLICATIONS1 HIGH RUGGEDNESS ELECTRONIC2IGNITIONS33221 1TO-218 ISOWATT218INTERNAL SCHEMATIC DIAGRAMfor TO-3Emitter: pin 2Base: pin1Collector: tabABSOLUTE MAXIMUM RATINGSSymbol Pa
9.4. Size:213K inchange semiconductor
bu931t.pdf 

isc Silicon NPN Power Transistor BU931TDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV E
9.5. Size:217K inchange semiconductor
bu931rpfi.pdf 

isc Silicon NPN Power Transistor BU931RPFIDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEO
9.6. Size:132K inchange semiconductor
bu931r bu932r.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU931R BU932R DESCRIPTION With TO-3 package DARLINGTON APPLICATIONS Automotive ignition applications Inverters circuits for motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBO
9.7. Size:216K inchange semiconductor
bu931p.pdf 

isc Silicon NPN Power Transistor BU931PDESCRIPTIONHigh VoltageDARLINGTONMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 4
9.8. Size:223K inchange semiconductor
bu931zpfi.pdf 

isc Silicon NPN Darlington Power Transistor BU931ZPFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T
9.9. Size:212K inchange semiconductor
bu931z.pdf 

isc Silicon NPN Darlington Power Transistor BU931ZDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T =2
9.10. Size:208K inchange semiconductor
bu931.pdf 

isc Silicon NPN Power Transistor BU931DESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Em
9.11. Size:218K inchange semiconductor
bu931zp.pdf 

isc Silicon NPN Darlington Power Transistor BU931ZPDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T =
9.12. Size:208K inchange semiconductor
bu931r.pdf 

isc Silicon NPN Power Transistor BU931RDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEOV E
9.13. Size:218K inchange semiconductor
bu931rp.pdf 

isc Silicon NPN Power Transistor BU931RPDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEOV
Datasheet: 2SA1803O
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