BUL52AFI. Аналоги и основные параметры

Наименование производителя: BUL52AFI

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 45 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500 V

Макcимальный постоянный ток коллектора (Ic): 6 A

Электрические характеристики

Корпус транзистора: TO220F

 Аналоги (замена) для BUL52AFI

- подборⓘ биполярного транзистора по параметрам

 

BUL52AFI даташит

 8.1. Size:10K  semelab
 bul52asmd.pdf pdf_icon

BUL52AFI

BUL52ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 500V IC = 6A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

 8.2. Size:224K  inchange semiconductor
 bul52a.pdf pdf_icon

BUL52AFI

isc Silicon NPN Power Transistor BUL52A DESCRIPTION Collector Emitter Sustaining Voltage V = 500V(Min.) CEO(SUS) Collector Saturation Voltage V = 0.1V(Max) @ I = 0.1A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in lighting applications and low cost switch- mode power

 9.1. Size:10K  semelab
 bul52bsmd.pdf pdf_icon

BUL52AFI

BUL52BSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 400V IC = 8A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

 9.2. Size:82K  jmnic
 bul52b.pdf pdf_icon

BUL52AFI

Product Specification www.jmnic.com Silicon Power Transistors BUL52B DESCRIPTION With TO-220C package High voltage Fast switching High energy rating APPLICATIONS Designed for use in electronic ballast applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT V

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: BUL49A, BUL49B, BUL50A, BUL50B, BUL510, BUL51A, BUL51B, BUL52A, BC639, BUL52B, BUL52BFI, BUL53A, BUL53B, BUL54A, BUL54AFI, BUL54B, BUL54BFI