2N3252S - Даташиты. Аналоги. Основные параметры

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

2N3251CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 60V A = (0.04 0.004

DUAL PNP SWITCHING TRANSISTORS 2N3251DCSM Dual Silicon Planer PNP Transistors Hermetic Ceramic Surface Mount Package Designed For Small Signal, General Purpose and Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (Each Side, TA = 25 C unless otherwise stated) Each Side Total Device VCBO Collector Base Voltage -50V VCEO C

Boca Semiconductor Corp. BSC http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251,A TO-18 Metal Can Package Designed for Small Signal, General Purpose and Switching Applications ABSOLUTE MAXIMUM RATINGS 2N3250 2N3250A DESCRIPTION SYMBOL UNIT 2N3251 2N3251A VCEO Collector Emitter Voltage 40 60 V VCBO Collector Bas

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland. 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/323 DEVICES LEVELS 2N3250A 2N3251A JAN 2N3250AUB 2N3251AUB JANTX JAN