DISCRETE SEMICONDUCTORSDATA SHEETBUW11F; BUW11AFSilicon diffused power transistors1997 Aug 14Product specificationSupersedes data of February 1996File under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW11F; BUW11AFDESCRIPTIONHigh-voltage, high-speed,ook, halfpageglass-passivated NPN powertransistor in

isc Silicon NPN Power Transistor BUW11FDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 850 VCBOV Collector-Emitter

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW11F BUW11AF DESCRIPTION With TO-3PFa package High voltage ;high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Collector3 Emitterl Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

DISCRETE SEMICONDUCTORSDATA SHEETBUW11W; BUW11AWSilicon diffused power transistors1997 Aug 14Product specificationFile under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW11W; BUW11AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 package.eAPPLICATIONS Converte

DISCRETE SEMICONDUCTORSDATA SHEETBUW11W; BUW11AWSilicon diffused power transistors1997 Aug 14Product specificationFile under Discrete Semiconductors, SC06Philips Semiconductors Product specificationSilicon diffused power transistors BUW11W; BUW11AWDESCRIPTIONHigh-voltage, high-speed,glass-passivated NPN powertransistor in a SOT429 package.eAPPLICATIONS Converte

isc Silicon NPN Power Transistor BUW11WDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 850 VCBOV Collector-Emitter

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW11 BUW11A DESCRIPTION With TO-3PN package High voltage ;high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings

isc Silicon NPN Power Transistor BUW11AWDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1000 VCBOV Collector-Emitte

isc Silicon NPN Power Transistor BUW11AFDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1000 VCBOV Collector-Emitte

isc Silicon NPN Power Transistor BUW11DESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 850 VCBOV Collector-Emitter V

isc Silicon NPN Power Transistor BUW11ADESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSConvertersInvertersSwitching regulatorsMotor control systemsABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1000 VCBOV Collector-Emitter