BUW11F Specs and Replacement

Type Designator: BUW11F

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 32 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: ISOTOP3

 BUW11F Substitution

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BUW11F datasheet

 ..1. Size:72K  philips

buw11f 1.pdf pdf_icon

BUW11F

DISCRETE SEMICONDUCTORS DATA SHEET BUW11F; BUW11AF Silicon diffused power transistors 1997 Aug 14 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF DESCRIPTION High-voltage, high-speed, ook, halfpage glass-passivated NPN power transistor in... See More ⇒

 ..2. Size:215K  inchange semiconductor

buw11f.pdf pdf_icon

BUW11F

isc Silicon NPN Power Transistor BUW11F DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850 V CBO V Collector-Emitter ... See More ⇒

 ..3. Size:125K  inchange semiconductor

buw11f buw11af.pdf pdf_icon

BUW11F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW11F BUW11AF DESCRIPTION With TO-3PFa package High voltage ;high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter l Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS... See More ⇒

 9.1. Size:79K  philips

buw11w buw11aw 1.pdf pdf_icon

BUW11F

DISCRETE SEMICONDUCTORS DATA SHEET BUW11W; BUW11AW Silicon diffused power transistors 1997 Aug 14 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW11W; BUW11AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. e APPLICATIONS Converte... See More ⇒

Detailed specifications: BUV98A, BUV98AV, BUV98BV, BUV98CV, BUV98V, BUW11, BUW11A, BUW11AF, 2SA1837, BUW12, BUW12A, BUW12AF, BUW12F, BUW13, BUW131, BUW131A, BUW131H

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