Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 GENERAL DESCRIPTIONHigh voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in thedynamic focus circuit of televisions and monitors.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0 V - 11

BUX87High voltage NPN power transistorFeatures High voltage capability (450 V VCEO) Minimum lot-to-lot spread for reliable operation High DC current gainApplications12 Flyback and forward single transistor low 3power convertersSOT-32DescriptionThe BUX87 is manufactured using high voltage multi-epitaxial planar technology for high Figure 1. Internal s

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Power Transistor BUX87DESCRIPTIONHigh Voltage capability: V = 450V(Min)CE(sus)Minimum lot-to-lot spread for reliable operationHigh DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFly back and Forward single transistor lowPower converters