BUX87-9 Specs and Replacement
Type Designator: BUX87-9
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO126
BUX87-9 Substitution
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BUX87-9 datasheet
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 GENERAL DESCRIPTION High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the dynamic focus circuit of televisions and monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 11... See More ⇒
BUX87 High voltage NPN power transistor Features High voltage capability (450 V VCEO) Minimum lot-to-lot spread for reliable operation High DC current gain Applications 1 2 Flyback and forward single transistor low 3 power converters SOT-32 Description The BUX87 is manufactured using high voltage multi-epitaxial planar technology for high Figure 1. Internal s... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUX87 DESCRIPTION High Voltage capability V = 450V(Min) CE(sus) Minimum lot-to-lot spread for reliable operation High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Fly back and Forward single transistor low Power converters ... See More ⇒
Detailed specifications: BUX85F, BUX86, BUX86-4, BUX86-5, BUX86-6, BUX86-7, BUX86P, BUX87, 2N3904, BUX87P, BUX88, BUX90, BUX91, BUX92, BUX93, BUX94, BUX95
Keywords - BUX87-9 pdf specs
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