C106 - описание и поиск аналогов

 0.1. Size:98K  motorola
 c106rev0.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by C106/D C106 Silicon Controlled Rectifier * Series Reverse Blocking Triode Thyristors *Motorola preferred devices . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is impo

 0.2. Size:110K  mospec
 2sc1061.pdf 

A A A

 0.3. Size:46K  no
 2sc1060.pdf 

 0.4. Size:154K  cdil
 csc1061.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSC1061 CSC1061 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1 2 3 F 3.75 3.88 G 2.29 2.79 H

 0.5. Size:206K  jmnic
 2sc1061.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1061 DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SA671 Note type 2SC1060 with short pin APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum rat

 0.6. Size:401K  kec
 krc101-krc106.pdf 

SEMICONDUCTOR KRC101 KRC106 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _

 0.7. Size:391K  kec
 krc101s-krc106s.pdf 

SEMICONDUCTOR KRC101S KRC106S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS With Built-in Bias Resistors. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/

 0.8. Size:426K  kec
 krc101m-krc106m.pdf 

SEMICONDUCTOR KRC101M KRC106M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS O A 3.20 MAX Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.

 0.9. Size:391K  kec
 krc101s krc102s krc103s krc104s krc105s krc106s.pdf 

SEMICONDUCTOR KRC101S KRC106S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS With Built-in Bias Resistors. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/

 0.10. Size:126K  shantou-huashan
 hc1061.pdf 

 0.11. Size:106K  diotec
 mmbtrc101ss mmbtrc102ss mmbtrc103ss mmbtrc104ss mmbtrc105ss mmbtrc106ss.pdf 

MMBTRC101SS ... MMBTRC106SS MMBTRC101SS ... MMBTRC106SS Surface Mount Bias Resistor Transistors NPN NPN SMD Transistoren mit Eingangsspannungsteiler Version 2011-02-10 Power dissipation Verlustleistung 200 mW 0.1 1.1 2.9 Plastic case SOT-23 0.4 3 Kunststoffgeh use (TO-236) Type Weight approx. Gewicht ca. 0.01 g Code 1 2 Plastic material has UL classification 94V-

 0.12. Size:216K  inchange semiconductor
 2sc1061.pdf 

isc Silicon NPN Power Transistor 2SC1061 DESCRIPTION Low Collector Saturation Voltage- V = 1.0(V)(Max)@ I = 2A CE(sat) C DC Current Gain- h = 35-320 @ I = 0.5A FE C Complement to Type 2SA671 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RA

 0.13. Size:230K  inchange semiconductor
 2sc1060.pdf 

isc Silicon NPN Power Transistor 2SC1060 DESCRIPTION With TO-220 package Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 1.0V(Max)@ I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convertor General purpose power amplifiers A