MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby C106/DC106Silicon Controlled Rectifier*SeriesReverse Blocking Triode Thyristors*Motorola preferred devices. . . Glassivated PNPN devices designed for high volume consumer applications suchas temperature, light, and speed control; process and remote control, and warningsystems where reliability of operation is impo

AAA

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package CSC1061CSC1061 NPN PLASTIC POWER TRANSISTORLow frequency Power AmplifierPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EBFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.401 2 3F 3.75 3.88G 2.29 2.79H

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SC1061 DESCRIPTION With TO-220 package Low saturation voltage Complement to type 2SA671 Note: type 2SC1060 with short pin APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum rat

SEMICONDUCTOR KRC101~KRC106TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B CFEATURES With Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_

SEMICONDUCTOR KRC101S~KRC106STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURES DIM MILLIMETERSWith Built-in Bias Resistors. _+A 2.93 0.20B 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/

SEMICONDUCTOR KRC101M~KRC106MTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES With Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSOA 3.20 MAXReduce a Quantity of Parts and Manufacturing Process.HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.

SEMICONDUCTOR KRC101S~KRC106STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURES DIM MILLIMETERSWith Built-in Bias Resistors. _+A 2.93 0.20B 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/

N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC1061 APPLICATIONS Low Frequency Power Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -65~150TjJunction Temperature 150PCCollector DissipationTc=25

MMBTRC101SS ... MMBTRC106SSMMBTRC101SS ... MMBTRC106SSSurface Mount Bias Resistor TransistorsNPN NPNSMD Transistoren mit EingangsspannungsteilerVersion 2011-02-10Power dissipation Verlustleistung 200 mW 0.11.1 2.9Plastic case SOT-230.4 3Kunststoffgehuse (TO-236)TypeWeight approx. Gewicht ca. 0.01 gCode1 2Plastic material has UL classification 94V-

isc Silicon NPN Power Transistor 2SC1061DESCRIPTIONLow Collector Saturation Voltage-:V = 1.0(V)(Max)@ I = 2ACE(sat) CDC Current Gain-: h = 35-320 @ I = 0.5AFE CComplement to Type 2SA671Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low frequency power amplifierapplications.ABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2SC1060DESCRIPTIONWith TO-220 packageCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.0V(Max)@ I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertorGeneral purpose power amplifiersA