All Transistors. C106 Datasheet

 

C106 Transistor. Datasheet pdf. Equivalent

Type Designator: C106

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 1.2 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO5

C106 Transistor Equivalent Substitute - Cross-Reference Search

C106 Datasheet PDF:

1.1. c106rev0.pdf Size:98K _motorola

C106
C106

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by C106/D C106 Silicon Controlled Rectifier * Series Reverse Blocking Triode Thyristors *Motorola preferred devices . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is importa

1.2. 2sc1061.pdf Size:110K _mospec

C106
C106

A A A

1.3. 2sc1060.pdf Size:46K _no

C106

1.4. csc1061.pdf Size:154K _cdil

C106
C106

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSC1061 CSC1061 NPN PLASTIC POWER TRANSISTOR Low frequency Power Amplifier PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1 2 3 F 3.75 3.88 G 2.29 2.79 H 2.

1.5. 2sc1061.pdf Size:206K _jmnic

C106
C106

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1061 DESCRIPTION ·With TO-220 package ·Low saturation voltage ·Complement to type 2SA671 ·Note: type 2SC1060 with short pin APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum rating

1.6. 2sc1061.pdf Size:145K _inchange_semiconductor

C106
C106

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1061 DESCRIPTION ·Low Collector Saturation Voltage- :VCE(sat)= 1.0(V)(Max)@ IC= 2A ·DC Current Gain- : hFE= 35-320 @ IC= 0.5A ·Complement to Type 2SA671 APPLICATIONS ·Designed for use in low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU

1.7. hc1061.pdf Size:126K _shantou-huashan

C106
C106

N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC1061 █ APPLICATIONS Low Frequency Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-220 Tstg——Storage Temperature………………………… -65~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(Tc=25℃)……

Datasheet: C100 , C1001 , C1002 , C1003 , C1004 , C101 , C102 , C103 , MPSA42 , C112 , C1-12 , C118 , C119 , C12-28 , C1-28 , C150 , C155 .

 


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