Справочник транзисторов. CMPT5088

 

Биполярный транзистор CMPT5088 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: CMPT5088
   Маркировка: C1Q
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.35 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 35 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 4.5 V
   Макcимальный постоянный ток коллектора (Ic): 0.01 A
   Предельная температура PN-перехода (Tj): 175 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 4 pf
   Статический коэффициент передачи тока (hfe): 300
   Корпус транзистора: SOT23

 Аналоги (замена) для CMPT5088

 

 

CMPT5088 Datasheet (PDF)

 ..1. Size:324K  central
cmpt5088 cmpt5089.pdf

CMPT5088
CMPT5088

CMPT5088CMPT5089www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5088 and CMPT5089 are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications.MARKING CODES: CMPT5088: C1QCMPT5089: C1RSOT-23 CASEMAX

 0.1. Size:329K  central
cmpt5088e.pdf

CMPT5088
CMPT5088

CMPT5087E PNPCMPT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT5087E SILICON TRANSISTORSand CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMPT5087E: C2QE CMPT5088

 0.2. Size:329K  central
cmpt5087e cmpt5088e series.pdf

CMPT5088
CMPT5088

CMPT5087E PNPCMPT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT5087E SILICON TRANSISTORSand CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMPT5087E: C2QE CMPT5088

 7.1. Size:324K  central
cmpt5086 cmpt5087.pdf

CMPT5088
CMPT5088

CMPT5086CMPT5087www.centralsemi.comSURFACE MOUNTDESCRIPTION:PNP SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT5086 and CMPT5087 are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise.MARKING CODES: CMPT5086: C2P CMPT5087: C2QSOT-23 CASEMAXIMUM RAT

 7.2. Size:329K  central
cmpt5087e.pdf

CMPT5088
CMPT5088

CMPT5087E PNPCMPT5088E NPNwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT5087E SILICON TRANSISTORSand CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise.MARKING CODES: CMPT5087E: C2QE CMPT5088

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