Биполярный транзистор CS6305 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: CS6305
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hfe): 60
CS6305 Datasheet (PDF)
jcs630va jcs630ra jcs630va jcs630ba jcs630sa jcs630fa jcs630ca.pdf
N N- CHANNEL MOSFET R JCS630A MAIN CHARACTERISTICS Package ID 9.0A VDSS 200 V Rdson-max 0.4 @Vgs=10V Qg-typ 22nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
jcs630va jcs630ra jcs630ba jcs630sa jcs630ca jcs630fa.pdf
N N- CHANNEL MOSFET R JCS630A MAIN CHARACTERISTICS Package ID 9.0A VDSS 200 V Rdson-max 0.4 @Vgs=10V Qg-typ 22nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
brcs630fa.pdf
BRCS630FA Rev.A Sep.-2023 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features V =200VI =9A DS DRDS(on)@10V0.4(Type.0.35) HF Product. / Applications LED Networking,Load Switch,LED applications.
cs630 a8h.pdf
Silicon N-Channel Power MOSFET R CS630 A8H General Description VDSS 200 V CS630 A8H, the silicon N-channel Enhanced ID 9 A PD(TC=25) 83 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
cs630 a3h.pdf
Silicon N-Channel Power MOSFET R CS630 A3H General Description VDSS 200 V CS630 A3H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs630 a4h.pdf
Silicon N-Channel Power MOSFET R CS630 A4H General Description VDSS 200 V CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs630f a9h.pdf
Silicon N-Channel Power MOSFET R CS630F A9H General Description VDSS 200 V CS630F A9H, the silicon N-channel Enhanced ID 9 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs630.pdf
IRF630(CS630) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
cs630d.pdf
BRD630(CS630D) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
cs630f.pdf
IRFS630(CS630F) N-Channel MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25)
cs630a3h.pdf
Silicon N-Channel Power MOSFET R CS630 A3H General Description VDSS 200 V CS630 A3H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25) 83 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs630fa9h.pdf
Silicon N-Channel Power MOSFET R CS630F A9H General Description VDSS 200 V CS630F A9H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A PD(TC=25) 30 W obtained by the self-aligned planar Technology which reduce the RDS(ON)Typ 0.23 conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs630a4h.pdf
Silicon N-Channel Power MOSFET R CS630 A4H General Description VDSS 200 V CS630 A4H, the silicon N-channel Enhanced ID 9 A PD(TC=25) 83 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi
cs630a8h.pdf
Silicon N-Channel Power MOSFET R CS630 A8H General Description VDSS 200 V CS630 A8H, the silicon N-channel Enhanced ID 9 A PD(TC=25) 83 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.23 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050