Биполярный транзистор DRAQA23E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: DRAQA23E
Маркировка: G3
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 2.2 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.08 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 6
Корпус транзистора: USSMINI3-F1-B
DRAQA23E Datasheet (PDF)
draqa23e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA23ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA23EDRA3123E in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Haloge
draqa24t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA24TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA24TDRA3124T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturi
draqa24x.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA24XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA24XDRA3124X in USSMini3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturization of sets, reduction
draqa52z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA52ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA52ZDRA3152Z in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Haloge
draqa44t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA44TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA44TDRA3144T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturi
draqa15t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA15TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA15TDRA3115T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturi
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050
