All Transistors. DRAQA23E Datasheet

 

DRAQA23E Datasheet and Replacement


   Type Designator: DRAQA23E
   SMD Transistor Code: G3
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 6
   Noise Figure, dB: -
   Package: USSMINI3-F1-B
 

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DRAQA23E Datasheet (PDF)

 ..1. Size:233K  panasonic
 draqa23e.pdf pdf_icon

DRAQA23E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA23ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA23EDRA3123E in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Haloge

 8.1. Size:232K  panasonic
 draqa24t.pdf pdf_icon

DRAQA23E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA24TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA24TDRA3124T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturi

 8.2. Size:235K  panasonic
 draqa24x.pdf pdf_icon

DRAQA23E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA24XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA24XDRA3124X in USSMini3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturization of sets, reduction

 9.1. Size:234K  panasonic
 draqa52z.pdf pdf_icon

DRAQA23E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA52ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA52ZDRA3152Z in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Haloge

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - DRAQA23E transistor datasheet

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