2N36 datasheet, аналоги, основные параметры
Наименование производителя: 2N36 📄📄
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.05 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимальный постоянный ток коллектора (Ic): 0.008 A
Предельная температура PN-перехода (Tj): 50 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.2 MHz
Статический коэффициент передачи тока (hFE): 40
Корпус транзистора: TO22
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Аналоги (замена) для 2N36
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2N36 даташит
0.1. Size:115K st
2n3600 bfx73 2n918.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
0.2. Size:299K fairchild semi
2n3663.pdf 
2N3663 B TO-92 C E NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 12 V V Collector-Base Voltage 30 V CBO
0.4. Size:73K central
2n3646 2n5772 pn3646.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
0.5. Size:87K central
2n3634 2n3635.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
0.8. Size:32K semelab
2n3637dcsm.pdf 
2N3637DCSM MECHANICAL DATA DUAL PNP SILICON TRANSISTORS Dimensions in mm (inches) IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) FEATURES 2 3 High Voltage Switching 1 4 A Low Power Amplifier Applications 0.23 6 5 rad. (0.009) Herme
0.9. Size:32K semelab
2n3634csm.pdf 
2N3634CSM MECHANICAL DATA PNP SILICON TRANSISTOR IN A Dimensions in mm (inches) HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR 0.51 0.10 (0.02 0.004) 0.31 HIGH RELIABILITY APPLICATIONS rad. (0.012) 3 FEATURES 21 High Voltage Switching 1.91 0.10 Low Power Amplifier Applications (0.075 0.004) A 0.31 rad. Hermetic Ceramic Surface Mount (0.012) 3.
0.10. Size:11K semelab
2n3665.pdf 
2N3665 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 1.0A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1
0.11. Size:18K semelab
2n3637csm.pdf 
2N3637CSM MECHANICAL DATA PNP SILICON TRANSISTOR IN A Dimensions in mm (inches) HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) 3 FEATURES 21 High Voltage Switching Low Power Amplifier Applications 1.91 0.10 (0.075 0.004) A 0.31 rad. Hermetic Ceramic Surface Mount (0.012)
0.12. Size:219K bocasemi
2n3634 2n3635 2n3636 2n3637.pdf 
Boca Semiconductor Corp. BSC http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com
0.14. Size:247K cdil
2n3635 6 7.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2N3635 2N3636, 37 UNITS Collector E
0.15. Size:227K microsemi
2n3635ub.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
0.16. Size:227K microsemi
2n3637ub.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
0.17. Size:169K microsemi
2n3637l.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3635 2N3636 2N3637 JAN 2N3634L 2N3635L 2N3636L 2
0.18. Size:227K microsemi
2n3636ub.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
0.19. Size:227K microsemi
2n3634l.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
0.20. Size:227K microsemi
2n3635l.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
0.21. Size:227K microsemi
2n3634ub.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
0.23. Size:227K microsemi
2n3636l.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
0.24. Size:181K inchange semiconductor
2n3667.pdf 
isc Silicon NPN Power Transistor 2N3667 DESCRIPTION Excellent Safe Operating Area Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general purpose high power switch and amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
Другие транзисторы: 2N3593, 2N3594, 2N3595, 2N3596, 2N3597, 2N3598, 2N3599, 2N35A, BC639, 2N360, 2N3600, 2N3601, 2N3602, 2N3603, 2N3604, 2N3605, 2N3605A
