2N3636 datasheet, аналоги, основные параметры
Наименование производителя: 2N3636 📄📄
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 175 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 175 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO5
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Аналоги (замена) для 2N3636
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2N3636 даташит
..1. Size:219K bocasemi
2n3634 2n3635 2n3636 2n3637.pdf 
Boca Semiconductor Corp. BSC http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com http //www.bocasemi.com
0.1. Size:227K microsemi
2n3636ub.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
0.2. Size:227K microsemi
2n3636l.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
9.1. Size:87K central
2n3634 2n3635.pdf 
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
9.2. Size:32K semelab
2n3637dcsm.pdf 
2N3637DCSM MECHANICAL DATA DUAL PNP SILICON TRANSISTORS Dimensions in mm (inches) IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) FEATURES 2 3 High Voltage Switching 1 4 A Low Power Amplifier Applications 0.23 6 5 rad. (0.009) Herme
9.3. Size:32K semelab
2n3634csm.pdf 
2N3634CSM MECHANICAL DATA PNP SILICON TRANSISTOR IN A Dimensions in mm (inches) HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR 0.51 0.10 (0.02 0.004) 0.31 HIGH RELIABILITY APPLICATIONS rad. (0.012) 3 FEATURES 21 High Voltage Switching 1.91 0.10 Low Power Amplifier Applications (0.075 0.004) A 0.31 rad. Hermetic Ceramic Surface Mount (0.012) 3.
9.4. Size:18K semelab
2n3637csm.pdf 
2N3637CSM MECHANICAL DATA PNP SILICON TRANSISTOR IN A Dimensions in mm (inches) HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) 3 FEATURES 21 High Voltage Switching Low Power Amplifier Applications 1.91 0.10 (0.075 0.004) A 0.31 rad. Hermetic Ceramic Surface Mount (0.012)
9.5. Size:247K cdil
2n3635 6 7.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier. ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL 2N3635 2N3636, 37 UNITS Collector E
9.6. Size:227K microsemi
2n3635ub.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
9.7. Size:227K microsemi
2n3637ub.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
9.8. Size:169K microsemi
2n3637l.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Tel +353 (0) 65 6840044 Fax +353 (0) 65 6822298 Website http //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3635 2N3636 2N3637 JAN 2N3634L 2N3635L 2N3636L 2
9.9. Size:227K microsemi
2n3634l.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
9.10. Size:227K microsemi
2n3635l.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
9.11. Size:227K microsemi
2n3634ub.pdf 
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS JANSM 3K Rads (Si) 2N3634 2N3635 2N3636 2N3637 JANSD 10K Rads (Si) 2N3634L 2N3635L 2N3636L 2N3637L JANSP 30K Rads (Si)
Другие транзисторы: 2N363, 2N3630, 2N3632, 2N3633, 2N3634, 2N3634S, 2N3635, 2N3635S, BD140, 2N3636S, 2N3637, 2N3637S, 2N3638, 2N3638A, 2N3639, 2N364, 2N3640
