FMMT5550 - Даташиты. Аналоги. Основные параметры

SOT SI I O A A T 0 HI H O TA T A SISTO S T ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V 8 V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V 8 V I V I II i V V I V I i V V I V I II I V V V V T V V V V T i 8 I V V T 8 I V V

SOT23 PNP SILICON PLANAR FMMT555 MEDIUM POWER TRANSISTOR ISSUE 4 AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current E C =IB2=IC/10 COMPLEMENTARY TYPE FMMT455 tf ns B 1000 PARTMARKING DETAIL 555 800 600 td ns SOT23 ABSOLUTE MAXIMUM RATINGS. 400 100 PARAMETER SYMBOL VALUE UNIT 200 50 0 0 Collector-Base Voltage VCBO -160 V -1 Collector-Emitter Vo

A Product Line of Diodes Incorporated FMMT558 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -400V Case SOT23 IC = -150mA high Continuous Collector Current Case material molded plastic. Green molding compound. ICM = -500mA Peak Pulse Current UL Flammability Rating 94V-0 500mW Power Dissipation Moisture Sensitivity

August 2009 FMMT549 PNP Low Saturation Transistor Features ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Sourced from process PB. 3 2 SuperSOT-23 1 Marking 549 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Unit VCEO Collector-Emi

A Product Line of Diodes Incorporated FMMT597 300V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -300V Case SOT23 IC = -0.2A Continuous Collector Current Case Material Molded Plastic, Green Molding Compound ICM = -1A Peak Pulse Current UL Flammability Classification Rating 94V-0 Complementary NPN Type FMMT497 Moisture

SOT SI I O A A T 088 S A SI A T A SISTO S T 08 ISS S T T I D T I T 88 T 8 T T T 88 T 8 T 8 iI I A SO T A I ATI S T T 88 T 8 IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T 88 T 8 T I I IT DITI II V V I I V I II i V V I I V I II I V V I V V I i I V V I V V I i i V V V I I I

A Product Line of Diodes Incorporated FMMT591 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -60V Case SOT23 IC = -1A High Continuous Collector Current Case Material molded plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 RSAT = 295m for a Low Equivalent On-Resistanc

A Product Line of Diodes Incorporated FMMT591A 40V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -40V Case SOT23 IC = -1A High Continuous Current Case Material Molded Plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage VCE(sat)

FMMT593 100V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -100V Case SOT23 IC = -1A High Continuous Collector Current Case Material Molded Plastic, Green Molding Compound ICM = -2A Peak Pulse Current UL Flammability Classification Rating 94V-0 Low Saturation Voltage Moisture Sensitivity Level 1 per J-STD-020 Excelle

A Product Line of Diodes Incorporated FMMT549 / FMMT549A 30V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data BVCEO > -30V Case SOT23 Maximum Continuous Collector Current IC = -1A UL Flammability Rating 94V-0 500mW power dissipation Case material molded Plastic. Complementary type Moisture Sensitivity L

A Product Line of Diodes Incorporated FMMT589 30V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -30V Case SOT23 Case Material molded plastic, Green molding compound IC = -1A Continuous Collector Current UL Flammability Classification Rating 94V-0 ICM = -2A Peak Pulse Current Moisture Sensitivity Level 1 pe

SOT SI I O A A T 08 S A SI A T A SISTO T I D T I T 8 T 8 T T T 88 A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I IT DITI II I V V I V V I i I V V I II i V V I I i V I i V 8 V I V V V I i 8 I V V T I V V i I V V T i i I V V T II i I I V V T i i

SOT23 NPN SILICON PLANAR FMMT5209 SMALL SIGNAL TRANSISTORS FMMT5210 ISSUE 2 - JULY 1995 T I D T I T E C T B SOT23 ABSOLUTE MAXIMUM RATINGS. T T T IT II V I V V II i V I V V i V I V V i II I Di i i i T T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated). T T T IT DITI I I II I V V I i I V V I II i V V I I i V I

SOT SI I O A A T 00 HI H O TA T A SISTO S T 0 ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V V I V I II i V V I V I i V V I V I II I V V V V T V V V V T i I V V T 8 I V V

FMMT560 500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -500V Case SOT23 IC = -150mA high Continuous Collector Current Case Material Molded Plastic, Green Molding Compound. ICM Up to -500mA Peak Pulse Current UL Flammability Classification Rating 94V-0 Excellent hFE Characteristics up to IC = -100mA Moisture Sensitivity

FMMT596 SOT 23 PNP silicon planar high voltage transistor Ordering information Device Reel size Tape width Quantity (inches (mm) per reel FMMT596TA 7 8 3,000 Device marking C E 596 C B B Pinout - top view E Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO -220 V Collector-emitter voltage VCEO -200 V Emitter-base voltage VEBO -5 V Peak pulse cu

FMMT591CSM Dimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar PNP Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 80V A = (0.04 0.00

FMMT591DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 80V CEO 6.22 0.13 A = 1.27 0.13 I = 1A C (0.05

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 FMMT591 TRANSISTOR (PNP) FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking 591 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBO VCEO Collector-Emitter Voltage -60 V V

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors FMMT593 TRANSISTOR (PNP) SO T-23 FEATURES Complementary Type FMMT493 MARKING 593 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage -100 V CEO V Emitter-Base Vo

www.jscj-elec.com AD-FMMT591 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-FMMT591 Plastic-Encapsulated Transistor AD-FMMT591 Transistor (PNP) FEATURES Low equivalent on-resistance AEC-Q101 qualified MARKING 591 Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-FMMT591 MAXIMUM RATINGS (T = 25 C unless otherwise specified) j Parameter Symbol Value U

FMMT591 TRANSISTOR (PNP) SOT-23 FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER Marking 591 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1 A PC Collector Power Dissipation 5

FMMT593 TRANSISTOR (PNP) SOT 23 FEATURES Complementary Type FMMT493 MARKING 593 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage -120 V CBO V Collector-Emitter Voltage -100 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -1 A C PC Collector Power Dissipation 25

FMMT591 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low equivalent on-resistance Marking 591 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Conti

FMMT591 COLLECTOR 3 General Purpose Transistor PNP Silicon 3 P b Lead(Pb)-Free 1 1 BASE 2 SOT-23 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO -60 V Collector-Emitter Breakdown Voltage V(BR)CBO -80 V Emitter-Base Breakdown Voltage V(BR)EBO V -5.0 Collector Current IC A -1.0 Peak Pulse Current ICm A -2.0 Power Dissipat

FMMT593 COLLECTOR 3 General Purpose Transistor PNP Silicon 3 P b Lead(Pb)-Free 1 1 BASE 2 SOT-23 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO -120 V Collector-Emitter Breakdown Voltage V(BR)CBO -100 V Emitter-Base Breakdown Voltage V(BR)EBO V -5.0 Collector Current IC A -1.0 Power Dissipation PD mW 250 TA=25 C Junc

SMD Type Transistors PNP Transistors FMMT560 (KMMT560) SOT-23 Unit mm Features +0.1 2.9 -0.1 +0.1 Collector Current Capability IC=-150mA 0.4 -0.1 3 Collector Emitter Voltage VCEO=-500V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

FMMT591 PNP Silicon Epitaxial Planar Transistor Features SOT-23 Low equivalent on-resistance Be complementary with FMMT491 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 80 V CBO Collector Emitter Voltage -V 60 V CEO Emitter Base Voltage -V 5 V

FMMT591 PNP Transistor Features Low equivalent on-resistance SOT-23 (TO-236) Be complementary with FMMT491 1.Base 2.Emitter 3.Collector Marking 591 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 80 V CBO Collector Emitter Voltage -V 60 V CEO Emitter Base Voltage -V 5

FMMT593 PNP Transistor Features For switching and AF amplifier applications. SOT-23 (TO-236) As complementary type of the NPN transistor FMMT493 is recommended. 1.Base 2.Emitter 3.Collector Marking 593 Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage -V 120 V CBO Collector

FMMT589 PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor 1.BASE 2.EMITTER 3.COLLECTOR SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage