FMMT5550R - Даташиты. Аналоги. Основные параметры

SOT SI I O A A T 0 HI H O TA T A SISTO S T ISS O 6 T I D T I T T T T T T T T A SO T A I ATI S T T T IT II V I V 8 V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T T T I I IT DITI II V 8 V I V I II i V V I V I i V V I V I II I V V V V T V V V V T i 8 I V V T 8 I V V

SOT23 PNP SILICON PLANAR FMMT555 MEDIUM POWER TRANSISTOR ISSUE 4 AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current E C =IB2=IC/10 COMPLEMENTARY TYPE FMMT455 tf ns B 1000 PARTMARKING DETAIL 555 800 600 td ns SOT23 ABSOLUTE MAXIMUM RATINGS. 400 100 PARAMETER SYMBOL VALUE UNIT 200 50 0 0 Collector-Base Voltage VCBO -160 V -1 Collector-Emitter Vo

A Product Line of Diodes Incorporated FMMT558 400V PNP HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > -400V Case SOT23 IC = -150mA high Continuous Collector Current Case material molded plastic. Green molding compound. ICM = -500mA Peak Pulse Current UL Flammability Rating 94V-0 500mW Power Dissipation Moisture Sensitivity