2N3704NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Co

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3704 2N3705TO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEAmplifier TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL 2N3704 2N3705 UNITVCEOCollector Emitter Voltage 30 VCollector Base

2N3700HRHi-Rel 80 V, 1 A NPN transistorDatasheet - production dataFeatures 1BVCEO 80 V23IC(max) 1 A33 TO-184HFE at 10 V - 150 mA >1001122 LCC-3UB Hermetic packagesPin 4 in UB is connected to the metallic lid ESCC and Jans qualified Up to 100 krad(Si) low dose rateFigure 1. Internal schematic diagram DescriptionThe 2N3700HR is a NPN tr

2N3700General purpose amplifiersDescriptionThe 2N3700 is silicon planar epitaxial NPNtransistor in Jedec TO-18 metal case. It isintended for small signal, low noise industrialapplications.TO-18Internal schematic diagramOrder codesPart Number Marking Package Packing2N3700 2N3700 TO-18 BagNovember 2006 Rev 2 1/7www.st.com 7Electrical ratings 2N37001 Electrical ratin

2N3703PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 66.TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO

2N3702PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 68. See PN200 for Characteristics.TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Co

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

DATA SHEET2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS (TA=25C) 2N3700SYMBOL 2N3701 UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-92 Plastic Package2N37022N3703PNP SILICON PLANAR EPITAXIAL TRANSISTORSDIM MIN MAXA 4,32 5,33B 4,45 5,20C 3,18 4,19D 0,41 0,55E 0,35 0,50F 5 DEGG 1,14 1,40H 1,14 1,53K 12,70 L 1.982 2.082ALL DIMENSIONS IN M.M.1 2 31 = EMITTER2 = COLLECTOR3 = BASEABSOLUTE MAXI

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N37002N3701TO-18General purpose amplifierABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 140 VCollector -Emitter Voltage VCEO 80 VEmitter -Base Voltage VEBO 7.0 VCollector Current IC 1.0 APower Dissipation @

TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector