Биполярный транзистор 2N3707 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N3707
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.36 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.03 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 11 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TO92
2N3707 Datasheet (PDF)
2n3707 2n3708 2n3709 2n3710 2n3711.pdf
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TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
2n3403 2n3404 2n3405 2n3414 2n3415 2n3416 2n3417 2n3702 2n3703 2n3704 2n3705 2n3706 2n3707 2n3708 2n3709 2n3710.pdf
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2n3700hr.pdf
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2N3700HRHi-Rel 80 V, 1 A NPN transistorDatasheet - production dataFeatures 1BVCEO 80 V23IC(max) 1 A33 TO-184HFE at 10 V - 150 mA >1001122 LCC-3UB Hermetic packagesPin 4 in UB is connected to the metallic lid ESCC and Jans qualified Up to 100 krad(Si) low dose rateFigure 1. Internal schematic diagram DescriptionThe 2N3700HR is a NPN tr
2n3700.pdf
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2N3700General purpose amplifiersDescriptionThe 2N3700 is silicon planar epitaxial NPNtransistor in Jedec TO-18 metal case. It isintended for small signal, low noise industrialapplications.TO-18Internal schematic diagramOrder codesPart Number Marking Package Packing2N3700 2N3700 TO-18 BagNovember 2006 Rev 2 1/7www.st.com 7Electrical ratings 2N37001 Electrical ratin
2n3703.pdf
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2N3703PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 66.TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage -30 VVCBO
2n3702.pdf
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2N3702PNP General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 68. See PN200 for Characteristics.TO-9211. Emitter 2. Collector 3. BasePNP Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Co
2n3704.pdf
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2N3704NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. Sourced from Process 10. See PN100 for characteristics.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Co
2n3700 2n3701.pdf
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DATA SHEET2N3700 2N3701 NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3700 and 2N3701 NPN Silicon Transistors are designed for high current general purpose amplifier applications. MAXIMUM RATINGS (TA=25C) 2N3700SYMBOL 2N3701 UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 7.0 V
2n3704 2n3705 2n3706.pdf
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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3702 03.pdf
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-92 Plastic Package2N37022N3703PNP SILICON PLANAR EPITAXIAL TRANSISTORSDIM MIN MAXA 4,32 5,33B 4,45 5,20C 3,18 4,19D 0,41 0,55E 0,35 0,50F 5 DEGG 1,14 1,40H 1,14 1,53K 12,70 L 1.982 2.082ALL DIMENSIONS IN M.M.1 2 31 = EMITTER2 = COLLECTOR3 = BASEABSOLUTE MAXI
2n3704 05.pdf
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3704 2N3705TO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEAmplifier TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL 2N3704 2N3705 UNITVCEOCollector Emitter Voltage 30 VCollector Base
2n3700 01.pdf
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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N37002N3701TO-18General purpose amplifierABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL VALUE UNITCollector -Base Voltage VCBO 140 VCollector -Emitter Voltage VCEO 80 VEmitter -Base Voltage VEBO 7.0 VCollector Current IC 1.0 APower Dissipation @
2n3019 2n3057 2n3700.pdf
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TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices Qualified Level 2N3019 2N3057A 2N3700 JAN 2N3019S 2N3700S JANTX JANTXV JANS MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 140 Vdc VCBO TO-39* (TO-205AD) Emitter-Base Voltage 7.0 Vdc VEBO 2N3019, 2N3019S Collector
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .