Справочник транзисторов. 2N3715HS

 

Биполярный транзистор 2N3715HS - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2N3715HS

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 150 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 200 °C

Граничная частота коэффициента передачи тока (ft): 4 MHz

Ёмкость коллекторного перехода (Cc): 10 pf

Статический коэффициент передачи тока (hfe): 50

Корпус транзистора: TO3

Аналоги (замена) для 2N3715HS

 

 

2N3715HS Datasheet (PDF)

4.1. 2n3715smd.pdf Size:10K _upd

2N3715HS

2N3715SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 10A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

4.2. 2n3715x.pdf Size:11K _upd

2N3715HS

2N3715X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 4.3. 2n3715 2n3716.pdf Size:272K _motorola

2N3715HS
2N3715HS

Order this document MOTOROLA by 2N3715/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3715 Silicon NPN Power Transistors 2N3716 . . . designed for mediumspeed switching and amplifier applications. These devices feature: Total Switching Time at 3 A typically 1.15 s 10 AMPERE Gain Ranges Specified at 1 A and 3 A POWER TRANSISTORS Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A

4.4. 2n3713 2n3714 2n3715 2n3716.pdf Size:88K _central

2N3715HS
2N3715HS

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

 4.5. 2n3713-2n3714-2n3715-2n3716-2n3789-2n3790-2n3791-2n3792.pdf Size:172K _comset

2N3715HS
2N3715HS

2N3713/2N3714/2N3715/2N3716 - NPN 2N3789/2N3790/2N3791/2N3792 - PNP EPITAXIAL-BASE NPN - PNP The 2N3713, 2N3714, 2N3715 and 2N3716 are silicon epitaxial-base NPN power transistor in Jedec TO-3 metal case. They are inteded for use in power linear and switching applications. The complementary PNP types are 2N3789, 2N3790, 2N3791 and 2N3792 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Rating

4.6. 2n3715 3716.pdf Size:38K _inchange_semiconductor

2N3715HS
2N3715HS

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N3715/3716 DESCRIPTION ·DC Current Gain- : hFE= 50-150@IC= 1A ·Wide Area of Safe Operation ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V(Max.)@ IC= 5A ·Complement to Type 2N3791/3792 APPLICATIONS ·Designed for medium-speed switching and amplifier applications ABSOLUTE MAXIMUM R

4.7. 2n3715 2n3716.pdf Size:174K _aeroflex

2N3715HS
2N3715HS

NPN Power Silicon Transistor 2N3715 & 2N3716 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/408 • TO-3 (TO-204AA) Package Maximum Ratings Ratings Symbol 2N3715 2N3716 Units Collector - Emitter Voltage VCEO 60 80 Vdc Collector - Base Voltage VCBO 80 100 Vdc Emitter - Base Voltage VEBO 7.0 Vdc Base Current IB 4.0 Adc Collector Current IC 10 Adc Total Power Diss

Другие транзисторы... 2N3713 , 2N371-33 , 2N3713HS , 2N3713SM , 2N3714 , 2N3714HS , 2N3714SM , 2N3715 , BC547 , 2N3715SM , 2N3716 , 2N3716HS , 2N3716SM , 2N3717 , 2N3718 , 2N3719 , 2N372 .

 

 
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