Биполярный транзистор 2N3723 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N3723
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.8 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 300 MHz
Ёмкость коллекторного перехода (Cc): 9 pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO5
2N3723 Datasheet (PDF)
2n3724 2n3725-a.pdf
2N37242N3725www.centralsemi.com2N3725ADESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR 2N3724, 2N3725, 2N3725A types are Silicon NPN Planar Epitaxial Transistors designed for high voltage, high current, high speed switching applications.MARKING: FULL PART NUMBERTO-39 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL 2N3724 2N3725 2N3725A UNITSCollector-Base Voltage VCB
2n3726 2n3727.pdf
TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
2n3724l.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/728C completed by 25 January 2011. 25 October 2010 MIL-PRF-19500/728B SUPERSEDING 16 December 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3724, 2N3724L, 2N3724UB, 2N3725, 2N3725L, 2N3725UB,
2n3725ub.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/728C completed by 25 January 2011. 25 October 2010 MIL-PRF-19500/728B SUPERSEDING 16 December 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3724, 2N3724L, 2N3724UB, 2N3725, 2N3725L, 2N3725UB,
2n3724ub.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/728C completed by 25 January 2011. 25 October 2010 MIL-PRF-19500/728B SUPERSEDING 16 December 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3724, 2N3724L, 2N3724UB, 2N3725, 2N3725L, 2N3725UB,
2n3725l.pdf
INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be MIL-PRF-19500/728C completed by 25 January 2011. 25 October 2010 MIL-PRF-19500/728B SUPERSEDING 16 December 2007 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, SWITCHING, TYPES 2N3724, 2N3724L, 2N3724UB, 2N3725, 2N3725L, 2N3725UB,
2n3724.pdf
2N3724Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 0.5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
2n3724a.pdf
2N3724ADimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 30V dia.IC = 1.2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
2n3720.pdf
7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3720APPLICATIONS: High-Speed Switching Medium-Current Switching High-Frequency AmplifiersFEATURES: Collector-Emitter Sustaining Voltage: Silicon PNPVCEO(SUS) = 60 Vdc (Min) - 2N3720Power Transistors DC Current Gain:hFE = 25-180 @ IC = 1.0 Adc Low Co
Другие транзисторы... 2N3716SM , 2N3717 , 2N3718 , 2N3719 , 2N372 , 2N3720 , 2N3721 , 2N3722 , 13007 , 2N372-33 , 2N3724 , 2N3724A , 2N3725 , 2N3725A , 2N3726 , 2N3727 , 2N3728 .
