Справочник транзисторов. 2N3746

 

Биполярный транзистор 2N3746 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N3746
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 30 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 200 °C
   Граничная частота коэффициента передачи тока (ft): 30 MHz
   Ёмкость коллекторного перехода (Cc): 150 pf
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: MT38-1

 Аналоги (замена) для 2N3746

 

 

2N3746 Datasheet (PDF)

 9.2. Size:10K  semelab
2n3740r.pdf

2N3746

2N3740RDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO66 6.35 (0.250)Metal Package. 8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.4.08(0.161)rad.Bipolar PNP Device. 1 2VCEO = 60V IC = 4A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS speci

 9.3. Size:32K  semelab
2n3741smd.pdf

2N3746
2N3746

2N3741 SMDSEMELABMECHANICAL DATAMEDIUM POWER PNPDimensions in mmSILICON POWER TRANSISTOR LOW SATURATION VOLTAGEHIGH GAIN FEATURES Hermetically sealed Surface Mount Package. Small Footprint - efficient use of PCBspace. Lightweight

 9.4. Size:64K  microsemi
2n3749 2n2880.pdf

2N3746
2N3746

TECHNICAL DATA PNP POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/315 Devices Qualified Level JAN 2N2880 2N3749 JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 110 Vdc VCBO Emitter-Base Voltage 8.0 Vdc VEBO Base Current I 0.5 Adc B Collector Current 5.0 Adc IC Total Power Dissipation

 9.5. Size:62K  microsemi
2n3740a.pdf

2N3746
2N3746

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3740AAPPLICATIONS: Drivers Switches Medium-Power AmplifiersFEATURES:Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100PNP Transistors Excellent Safe Area Limits Low Collector Cuto

 9.6. Size:62K  microsemi
2n3741a.pdf

2N3746
2N3746

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3741AAPPLICATIONS: Drivers Switches Medium-Power AmplifiersFEATURES:Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100PNP Transistors Excellent Safe Area Limits Low Collector Cuto

 9.7. Size:55K  microsemi
2n3743 2n4930 2n4931.pdf

2N3746
2N3746

TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices Qualified Level JAN, JANTX 2N3743 2N4930 2N4931 JANTXV MAXIMUM RATINGS Ratings Sym 2N3743 2N4930 2N4931 Unit Collector-Emitter Voltage 300 200 250 Vdc VCEO Collector-Base Voltage 300 200 250 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Collector Current 200 mAdc IC Total

 9.8. Size:62K  microsemi
2n3740.pdf

2N3746
2N3746

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3740APPLICATIONS: Drivers Switches Medium-Power AmplifiersFEATURES:Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100PNP Transistors Excellent Safe Area Limits Complementary to NP

 9.9. Size:62K  microsemi
2n3741.pdf

2N3746
2N3746

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3741APPLICATIONS: Drivers Switches Medium-Power AmplifiersFEATURES:Medium Power Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100PNP Transistors Excellent Safe Area Limits Complementary to NP

 9.10. Size:221K  inchange semiconductor
2n3740a.pdf

2N3746
2N3746

isc Silicon PNP Power Transistor 2N3740ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-60V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -

 9.11. Size:221K  inchange semiconductor
2n3741a.pdf

2N3746
2N3746

isc Silicon PNP Power Transistor 2N3741ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-80V(Min)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -80 VCBOV Collector-Emitter Voltage -

 9.12. Size:196K  inchange semiconductor
2n3740 2n3741.pdf

2N3746
2N3746

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N3740/3741 DESCRIPTION DC Current Gain- : hFE= 30-100@IC= -250mA Wide Area of Safe Operation Collector-Emitter Saturation Voltage- : VCE(sat)= -0.6 V(Max)@ IC = -1A APPLICATIONS Designed for use as drivers, switches and medium-power amplifier and general purpose applications ABSOL

Другие транзисторы... 2N3741A , 2N3741R , 2N3742 , 2N3742S , 2N3743 , 2N3743S , 2N3744 , 2N3745 , 2SC2625 , 2N3747 , 2N3748 , 2N3749 , 2N375 , 2N3750 , 2N3751 , 2N3752 , 2N376 .

 

 
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