2N37712N3772HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-baseNPN transistors mounted in Jedec Jedec TO-3metal case. They are intended for linearamplifiers and inductive switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2N3771

2N37712N3772HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPESDESCRIPTION The 2N3771, 2N3772 are silicon epitaxial-baseNPN transistors mounted in Jedec Jedec TO-3metal case. They are intended for linearamplifiers and inductive switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Unit2N3771

2N3771, 2N37722N3771 is a Preferred DeviceHigh Power NPN SiliconPower TransistorsThese devices are designed for linear amplifiers, series passregulators, and inductive switching applications.Featureshttp://onsemi.com Forward Biased Second Breakdown Current Capability20 and 30 AMPEREIS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N3771DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 15AFE CLow Saturation Voltage-: V )= 2.0V(Max)@ I = 15ACE(sat CAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andinductive switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N3771DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 15AFE CLow Saturation Voltage-: V )= 2.0V(Max)@ I = 15ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for linear amplifiers, series pass

Order this documentMOTOROLAby 2N3771/DSEMICONDUCTOR TECHNICAL DATA*2N3771High Power NPN Silicon Power2N3772Transistors*Motorola Preferred Device. . . designed for linear amplifiers, series pass regulators, and inductive switching20 and 30 AMPEREapplications.POWER TRANSISTORS Forward Biased Second Breakdown Current CapabilityNPN SILICONIS/b = 3.75 Adc @ VCE = 4

2N3771, 2N37722N3771 is a Preferred DeviceHigh Power NPN SiliconPower TransistorsThese devices are designed for linear amplifiers, series passregulators, and inductive switching applications.Featureshttp://onsemi.com Forward Biased Second Breakdown Current Capability20 and 30 AMPEREIS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

Order this documentMOTOROLAby 2N3773/DSEMICONDUCTOR TECHNICAL DATANPN2N3773*Complementary Silicon PowerPNP2N6609TransistorsThe 2N3773 and 2N6609 are PowerBase power transistors designed for high*Motorola Preferred Devicepower audio, disk head positioners and other linear applications. These devices canalso be used in power switching circuits such as relay or solenoid d

2N3773High power NPN transistorFeatures High power dissipation Low collector-emitter saturation voltageDescriptionThe device is a planar NPN transistor mounted in 1TO-3 metal case. It is intended for linear 2amplifiers and inductive switching applications.TO-3Figure 1. Internal schematic diagramTable 1. Device summaryOrder code Marking Package Packaging2N3773

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

2N3773NPN Power TransistorsThe 2N3773 is a PowerBaset power transistor designed for highpower audio, disk head positioners and other linear applications. Thisdevice can also be used in power switching circuits such as relay orsolenoid drivers, DC-DC converters or inverters.http://onsemi.comFeatures High Safe Operating Area (100% Tested) 150 W @ 100 V16 A NPN Completely

2N3771, 2N37722N3771 is a Preferred DeviceHigh Power NPN SiliconPower TransistorsThese devices are designed for linear amplifiers, series passregulators, and inductive switching applications.Featureshttp://onsemi.com Forward Biased Second Breakdown Current Capability20 and 30 AMPEREIS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771 = 2.5 Adc @ VCE = 60 Vdc - 2N3772 POWER TRANSISTO

NPN 2N3773*, PNP 2N6609Preferred DeviceComplementary SiliconPower TransistorsThe 2N3773 and 2N6609 are PowerBaset power transistorsdesigned for high power audio, disk head positioners and other linearapplications. These devices can also be used in power switchinghttp://onsemi.comcircuits such as relay or solenoid drivers, DC-DC converters orinverters.16 A COMPLEMENTARYFeat

UNISONIC TECHNOLOGIES CO., LTD 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS DESCRIPTION The UTC 2N3772 is a silicon power transistor in TO-3 metal case. It is designed for linear amplifiers, series pass regulators, and inductive switching applications. 1TO-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2N3

UTC 2N3773/2N6099 P O W E R TRANSISTORCOMPLEMENTARY SILICONTRANSISTORS The 2N3773/2N6099 are power-base power transistorsdesigned for high power audio, disk head positions andother linear applications. These device can be used inpower switching circuits such as relay or solened drivers,DC to DC converters or inverts.FEATURES*High safe operating area(100 tested) 150W and 100V

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3772NPN SILICON PLANAR POWER TRANSISTORTO-3Metal Can PackageDesigned for Linear Amplifiers, Series Pass Regulators, and Inductive Switching Applications.ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITSVALUECollector Base Voltage VCBO V100Collector Emitter Voltage VCEO V60Colle

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3773NPN SILICON PLANAR POWER TRANSISTORTO-3Metal Can PackageComplementary 2N6609General Purpose Amplifier specially suited for Power Conditioning ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITSVALUECollector Base Voltage VCBO 160 VCollector Emitter Voltage VCEO V140

Product Specification www.jmnic.comSilicon NPN Power Transistors 2N3773 DESCRIPTION With TO-3 package Complement to type 2N6609 High DC current gain Low saturation voltage High safe operating area APPLICATIONS Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as

2N3773T3BLSilicon NPN Power TransistorDESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 8AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 8ACE(sat CComplement to Type 2N6609APPLICATIONSDesigned for high power audio ,disk head positioners andother linear applications, which can also be used in powerswitching circuits such as relay or

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2N3772DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 10AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 10ACE(sat CAPPLICATIONSDesigned for linear amplifiers, series pass regulators, andinductive switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

SPTECH Product Specificationisc Silicon NPN Power Transistor 2N3773DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 8AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 8ACE(sat CComplement to Type 2N6609APPLICATIONSDesigned for high power audio ,disk head positioners andother linear applications, which can also be used in powerswitch

isc Silicon NPN Power Transistor 2N3772DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 10AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 10ACE(sat C100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for linear amplifiers, series pass regulators, andinducti

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N3773DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 8AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 8ACE(sat CComplement to Type 2N6609100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high

isc Silicon NPN Power Transistor 2N3772JDESCRIPTIONJ:High DC Current Gain-h :100-150@I = 10AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 10ACE(sat CMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for linear amplifiers, series pass regulators, andinductive switching applications.ABSOLUTE MAXIMUM RATINGS(T